Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Pb
Mechanical Data
Case: TO220AC
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Tin. Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 2.24 grams (approximate)
Base
Cathode
1
13
Cathode
Package Pin Out
Confi
Anode
uration
MBR1635/ MBR1640
16A SCHOTTKY BARRIER RECTIFIER
Ordering Information (Note 3)
Part Number Case Packaging
MBR16xx* TO220AC 50/Tube
* xx = Device type, e.g. MBR1640
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MBR16xx
YYWW AB
MBR1635/ MBR1640
Document number: DS23011 Rev. 9 - 2
MBR16xx = Product Type Marking Code
B = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 10 = 2010)
WW = Week (01 - 53)
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Maximum Ratings (@T
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 4) @ TC = +125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 4)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
MBR1635/ MBR1640
MBR
1635
V
V
RRM
RWM
35 40 V
VR
V
R(RMS)
I
IO
FSM
R
θJC
24.5 28 V
16 A
150 A
1.5
dV/dt 1000 V/µs
T
J, TSTG
-65 to +150
MBR
1640
Unit
C/W
C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Forward Voltage Drop @ IF =16A, TC = +25°C
@ IF =16A, TC =+125°C
Peak Reverse Current @TC = +25°C
at Rated DC Blocking Voltage @ TC = +125°C
Typical Total Capacitance (Note 5)
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
20
VFM
IRM
CT
50
0.63
0.57
0.2
40
mA
450 pF
V
(A)
(A)
EN
16
EN
MBR1630 - MBR1645
10
D
12
WA
8
A
4
(AV)
I, AVE
0
050100150
T , CASE TEMPERATURE ( C)
C
°
Fig. 1 Forward Current Derating Curve
MBR1635/ MBR1640
Document number: DS23011 Rev. 9 - 2
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S
1.0
ANE
AN
F
I, INS
0.1
0.2 0.4 0.6 0.8 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Voltage Characteristics
MBR1650 / MBR1660
May 2013
© Diodes Incorporated