Diodes MBR1030, MBR1050 User Manual
A
g
Features
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Pb
Mechanical Data
Case: TO-220AC
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 2.24 grams (approximate)
Base
Cathode
1
13
Cathode
Package Pin Out
Confi
Anode
uration
MBR1030 –MBR1050
10A SCHOTTKY BARRIER RECTIFIER
Ordering Information (Note 3)
Part Number Case Packaging
MBR10xx* TO-220AC 50/Tube
* xx = Device type, e.g. MBR1045
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MBR10xx
YYWW AB
MBR1030 – MBR1050
Document number: DSc23009 Rev. 10 - 2
MBR10xx = Product Type Marking Code
B = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 13 = 2013)
WW = Week (01 - 53)
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June 2013
© Diodes Incorporated
R
G
F
O
R
R
C
U
R
REN
T
N
TAN
TANEO
U
FOR
R
D CUR
REN
T
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 7)
RMS Reverse Voltage
Average Rectified Output Current
(Note 4) @TC = +125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Thermal Characteristics
Characteristic Symbol
Typical Thermal Resistance Junction to Case (Note 5)
Operating and Storage Temperature Range
V
RRM
V
RWM
VR
V
R(RMS)
IO
I
FSM
R
T
J, TSTG
θJC
MBR1030 –MBR1050
MBR
1030
MBR
1030
MBR
1035
MBR
1045
30 35 45 50 V
21 24.5 31.5 35 V
10 A
150 A
MBR
1035
MBR
1045
2.5 °C/W
-65 to +150 °C
MBR
1050
MBR
1050
Unit
Unit
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Forward Voltage Drop @ IF = 10A, TC = +25°C
@ IF = 10A, TC = +125°C
Peak Reverse Current @TC = +25°C
at Rated DC Blocking Voltage (Note 7) @TC = +125°C
Typical Total Capacitance (Note 5)
Notes: 4. Thermal resistance junction to case mounted on heatsink.
5. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
6. RoHS revision 13.2.2003. High temperature solder exemptions applied, see EU Directive Annex Note 7.
7. Short duration pulse test used to minimize self-heating effect.
10
(A)
(A)
8
6
D
WA
WA
4
E
S
A
50
10
1.0
VFM
IRM
CT
MBR
1030
MBR
1035
0.84
0.57
0.1
15
MBR1030 - MBR1045
MBR
1045
MBR
1050
0.95
0.70
0.1
25
Unit
V
mA
400 pF
MBR1050 / MBR1060
2
(AV)
I, AVE
0
050100150
T , CASE TEMPERATURE ( C)
C
°
Figure 1 Forward Current Derating Curve
MBR1030 – MBR1050
Document number: DSc23009 Rev. 10 - 2
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S
F
I, I
0.1
0.2 0.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 2 Typical Forward Characteristics
1.0
June 2013
© Diodes Incorporated
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