
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Data Sheet
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR10100C is available in standard TO-220F-3,
TO-220-3 (2), TO-263-2 and TO-252-2 (1) packages.
Main Product Characteristics
I
2×5A
F(AV)
V
100V
RRM
TJ
VF(max) 0.75V
150C
Mechanical Characteristics
Features
High Surge Capacity
•
• 150C Operating Junction Temperature
• 10A Total (5A Per Diode Leg)
• Guard-ring for Stress Protection
• Pb-free Packages are available
• Case: Epoxy, Molded
• Epoxy Meets UL 94V-0 @ 0.125in.
• Weight (Approximately):
1.9Grams (TO-220-3 (2) and TO-220F-3)
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
TO-220F-3 (Option 1) TO-220-3 (2) TO-263-2 TO-252-2 (1)
Figure 1. Package Types of MBR10100C
Aug. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Ordering Information
MBR10100C -
Circuit Type
Package
T: TO-220-3 (2)
TF: TO-220F-3
D: TO-252-2 (1)
S2: TO-263-2
E1: Lead Free
G1: Green
Blank: Tube
TR: Ta
e & Reel
Package
TO-220-3 (2)
TO-220F-3
TO-263-2
TO-252-2(1)
Part Number Marking ID
Lead Free Green Lead Free Green
MBR10100CTE1
MBR10100CTF
-E1
MBR10100CS2
-E1
MBR10100CS2
TR-E1
MBR10100CDE1
MBR10100CD
TR-E1
MBR10100CTG1
MBR10100CTF
-G1
MBR10100CS2
-G1
MBR10100CS2
TR-G1
MBR10100CDG1
MBR10100CD
TR-G1
MBR10100CTE1
MBR10100CTFE1
MBR10100CS2-E1 MBR10100CS2-G1 Tube
MBR10100CS2-E1 MBR10100CS2-G1
MBR10100CD-E1 MBR10100CD-G1 Tube
MBR10100CD-E1 MBR10100CD-G1
MBR10100CTG1
MBR10100CTF-G1 Tube
Packin
g Type
Tube
Tape &
Reel
Tape &
Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Aug. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Absolute Maximum Ratings (Per Diode Leg) (Note 1)
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
) TC=136C
R
Peak Repetitive Forward Current
(Rated V
, Square Wave, 20kHz) TC=134C
R
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Half Wave, Single Phase,
60Hz)
Operating Junction Temperature Range (Note 2) TJ 150
V
RRM
V
RWM
V
R
I
5 A
F(AV)
I
10 A
FRM
I
100 A
FSM
100 V
C
Storage Temperature Range T
Voltage Rate of Change (Rated VR) dv/dt 10000
-55 to 150
STG
C
V/s
ESD (Machine Model=C) > 400 V
ESD (Human Body Model=3B) > 8000 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
.
1/
JA
/dTJ <
D
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
TO-220-3 (2)/
TO-252-2 (1)
Junction to Case
JC
TO-220F-3 4.5
3.0
C/W
Maximum Thermal Resistance
JA
Junction to
Ambient
TO-220-3 (2)/
TO-252-2(1)
60
TO-220F-3 60
C/W
TO-263-2 50
Aug. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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TO-263-2 2.0

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Typical Performance Characteristics
100
10
TJ=150oC
1
0.1
Instantaneous Forwa r d Current (A)
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
TJ=25oC
TJ=125oC
10000
1000
100
10
1
0.1
0.01
Instantaneous Reverse Curr ent (A)
1E-3
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
TJ=150oC
TJ=125oC
TJ=25oC
Figure 5. Typical Reverse Current Per Diode
10
9
8
7
6
5
4
3
2
Average Forward Current AMPS
1
0
100 105 110 115 120 125 130 135 140 145 150 155
Case Temperature (oC)
Figure 6. Average Forward Current vs.
Case Temperature (Per Diode)
Aug. 2013 Rev. 1. 7 BCD Semiconductor Manufacturing Limited
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