Diodes LMN400E01 User Manual

Features

• Voltage Controlled Small Signal Switch

• N-MOSFET with ESD Gate Protection

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/ROHS Compliant (Note 1)

• "Green" Device (Note 2)

Description

LMN400E01 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a discrete
pass transistor with stable V
voltage and can support continuous maximum current of 400 mA. It
also contains an ESD protected discrete N-MOSFET that can be used
as control. The component can be used as a part of a circuit or as a
stand alone discrete device.

which does not depend on input

CE(SAT)

1

2

3

Top View

SOT363

6

5

4

LMN400E01

400mA LOAD SWITCH FEATURING PRE-BIASED

PNP TRANSISTOR AND ESD PROTECTED N-MOSFET

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. "Green Molding" Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL- STD -202, Method 208

• Marking Information: See Page 8

• Ordering Information: See Page 8

• Weight: 0.006 grams (approximate)

•

Reference

Q1
Q2 N-MOSFET

Device Type R1(NOM) R2(NOM) Figure

PNP

Transistor

10K

220 2

⎯ ⎯

PNP

C_Q1

Q1

E_Q1

B_Q1

C

R2

B

220

E

R1

10K

1

2

G_Q2

S_Q2

456

S

Q2

G

NMOS

D

3

D_Q2

Top View

Internal Schematic

2

Ordering Information (Note 3)

Device Packaging Shipping

LMN400E01-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

PM5

PM5 = Product Type Marking Code,
YM = Date Code Marking

YM

Y = Year, e.g., Y = 2011
M = Month, e.g., 9 = September

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013

Code T U V W X Y Z A

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

LMN400E01

Document number: DS30750 Rev. 8 - 2

1 of 10

www.diodes.com

© Diodes Incorporated

July 2011

Maximum Ratings, Total Device @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation (Note 4)
Power Derating Factor above 37.5°C
Output Current

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 4)

Maximum Ratings:
Pre-Biased PNP Transistor (Q1) @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current

= 25°C unless otherwise specified

A

V
V

CBO
CEO

Vcc
V

I

C

LMN400E01

PD

P

der

I

out

Tj, T

STG

R

JA

θ

in

-6 to +5 V

200 mW

1.6 mW/°C

400 mA

-55 to +150
625

°C

°C/W

-50 V

-50 V

-50 V

-400 mA

Maximum Ratings:
ESD Protected N-Channel MOSFET (Q2) @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Drain Gate Voltage (RGS ≤ 1M Ohm) V

Gate-Source Voltage Continuous
Pulsed (tp<50 uS)

Drain Current (Note 4) Continuous (Vgs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
Continuous Source Current

Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

LMN400E01

Document number: DS30750 Rev. 8 - 2

= 25°C unless otherwise specified

A

V

DSS
DGR

V

GSS

I

D

I

S

2 of 10

www.diodes.com

60 V

60 V
+/-20
+/-40

300
800

V

mA

300 mA

© Diodes Incorporated

July 2011

(BR)

(BR)

)

)

)

)

)

)

Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @T

= 25°C unless otherwise specified

A

LMN400E01

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Ouput Current

I

⎯ ⎯

CBO

I

⎯ ⎯
V
V

V
I

O(OFF)

CEO

CBO
CEO

I(OFF

-50

-50

-0.3 -0.55

⎯ ⎯

⎯ ⎯
⎯ ⎯

-500 nA

-1 uA

⎯

-1 uA

VCB = -50V, IE = 0
VCE = -50V, IB = 0

V

IC = -10uA, IE = 0

V

IC = -2mA, IB = 0

V

VCE = -5V, IC = -100uA
VCC = -50V, VI = 0V

ON CHARACTERISTICS (Note 5)

-0.15 V

-0.3 V

-0.5 V

-0.6 V

⎯ ⎯ V
⎯ ⎯ V
⎯

Collector-Emitter Saturation Voltage

DC Current Gain
Input On Voltage

Output Voltage (Equivalent to V

CE(SAT

Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage

V

) V

V

CE(SAT)

h

FE

V

I(ON

⎯

O(ON

I

⎯

I

V

BE(ON

BE(SAT

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

55 220
55 225

-3 -1.5

⎯

⎯

-0.1 -0.3 V

-18 -45 mA

-1.2 -1.6 V

-1.9 -2.5 V
Input Resistor (Base), +/- 30% R2 0.154 0.22 0.286
Pull-up Resistor (Base to Vcc supply), +/- 30% R1 7 10 13
Resistor Ratio (Input Resistor/Pullup resistor) R1/R2 36 45 55

V

KΩ
KΩ

⎯ ⎯

= -10mA, IB = -0.3mA

I

C

= -200mA, IB = -20mA

IC

IC = -400mA, IB= -40mA
IC = -500mA, IB = -50mA

= -5V, IC = -50mA

CE

= -5V, IC = -400mA

CE

VO = -0.3V, IC = -20mA
Io/II = -50mA /-2.5mA
VI = -5V
VCE = -5V, IC = -400mA
IC = -50mA, IB = -5mA

⎯
⎯

SMALL SIGNAL CHARACTERISTICS

= -10V, IE = -5mA,

V

Gain Bandwidth Product

Notes: 5. Short duration pulse test used to minimize self-heating effect.

LMN400E01

Document number: DS30750 Rev. 8 - 2

f

⎯

T

www.diodes.com

3 of 10

200

⎯

MHz

CE

f = 100MHz

July 2011

© Diodes Incorporated