Page 1
Product Summary
Reference
Q1 PNP Transistor 10K 220
Q2 N-MOSFET
Device
Type
R1
(NOM)
⎯ ⎯
R2
(NOM)
R3
⎯
Figure
2
(NOM)
37K 2
Description
LMN400B01 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a discrete
pass transistor with stable V
voltage and can support continuous maximum current of 400 mA . It
also contains a discrete N-MOSFET with gate pull-down resistor that
can be used as control. The component devices can be used as a
part of a circuit or as a stand alone discrete device.
which does not depend on input
CE(SAT)
6
1
2
3
Top View
5
4
LMN400B01
400mA LOAD SWITCH FEATURING PNP TRANSISTOR
AND N-MOSFET WITH GATE PULL-DOWN RESISTOR
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Ideally Suited for Automated Assembly Processes
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.016 grams (approximate)
Top View
Internal Schematic
e3
Ordering Information (Note 4)
Part Number
LMN400B01-7 SOT26 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Case Packaging
Marking Information
Date Code Key
Year 2006 2007 ….. 2012 2013 2014 2015 2016 2017
Code T U ….. Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
LMN400B01
Document number: DS30699 Rev. 8 - 2
PM3 = Product Type Marking Code,
PM3
YM
YM = Date Code Marking
Y = Year, e.g., Z = 2012
M = Month, e.g., 9 = September
1 of 9
www.diodes.com
© Diodes Incorporated
July 2012
Page 2
LMN400B01
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Power Derating Factor above +100°C
Output Current
P
I
PD
DER
OUT
300 mW
2.4 mW/°C
400 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 5)
TJ, T
R
STG
JA
θ
-55 to +150
417
°C
°C/W
Maximum Ratings:
Pre-Biased PNP Transistor (Q1) (@T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current
= +25°C, unless otherwise specified.)
A
V
CBO
V
CEO
VCC
V
IN
I
C
-6 to +5 V
-400 mA
-50 V
-50 V
-50 V
Maximum Ratings:
ESD Protected N-Channel MOSFET (Q2) (@T
Characteristic Symbol Value Unit
Drain-Source Voltage
Drain Gate Voltage (RGS ≤1MΩ) V
Gate-Source Voltage Continuous
Pulsed (tp < 50µS)
Drain Current (Note 5) Continuous (VGS = 10V)
Pulsed (tp <10µS, Duty Cycle <1%)
Continuous Source Current
Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
LMN400B01
Document number: DS30699 Rev. 8 - 2
= +25°C, unless otherwise specified.)
A
V
DSS
DGR
V
GSS
I
D
I
S
2 of 9
www.diodes.com
60 V
60 V
+/-20
+/-40
115
800
V
mA
115 mA
© Diodes Incorporated
July 2012
Page 3
Electrical Characteristics: Pre-Biased PNP Transistor (Q1) (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Ouput Current
I
CBO
I
CEO
V
V
(BR)CBO
(BR)CEO
V
I(OFF)
I
⎯ ⎯
O(OFF)
⎯ ⎯
⎯ ⎯
-50
-50
-0.3
⎯ ⎯
⎯ ⎯
⎯ ⎯
-500 nA
-1 µA
-1 µA
ON CHARACTERISTICS (Note 6)
-0.06 -0.15 V
-0.18 -0.30 V
-0.28 -0.60 V
⎯ ⎯
⎯ ⎯
⎯ ⎯ V
⎯ ⎯
⎯
-18 -45 mA
-1.2 -1.6 V
-1.9 -2.5
-5.25 -6.00
Collector-Emitter Saturation Voltage
DC Current Gain
Input On Voltage
Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
h
FE
V
I(ON)
I
⎯
i
V
BE(ON)
V
BE(SAT)
⎯
⎯
⎯
55 220
55 260
55 265
55 225
-3.0 -1.5
⎯
⎯
⎯
Input Resistor (Base), +/- 30% R2 0.154 0.220 0.286
Pull-up Resistor (Base to VCC supply), +/- 30%
R1 7 10 13
Resistor Ratio (Input Resistor/Pullup resistor) R1/R2 36 45 55
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
* Pulse Test: Pulse width, tp <300µs, Duty Cycle, d ≤ 0.02
Note: 6. Short duration pulse test used to minimize self-heating effect.
f
⎯
T
LMN400B01
Document number: DS30699 Rev. 8 - 2
www.diodes.com
3 of 9
200
⎯
LMN400B01
= +25°C, unless otherwise specified.)
A
VCB = -50V, IE = 0
VCE = -50V, IB = 0
V
IC = -10µA, IE = 0
V
IC = -2mA, IB = 0
V
VCE = -5V, IC = -100µA
VCC = -50V, VI = 0V
= -10mA, IB = -0.3mA
I
C
IC = -300mA, IB= -30mA
IC = -500mA, IB = -50mA
= -5V, IC = -50mA
V
CE
= -5V, IC = - 100mA
V
CE
= -5V, IC = -200 mA
CE
= -5V, IC = -400mA
V
CE
VDC VO = -0.3V, IIC = -2mA
VI = -5V
VCE = -5V, IC = -400mA
= -50mA, IB = -5mA
I
C
V
IC = -400mA, IB = -20mA
KΩ
KΩ
⎯ ⎯
= -10V, IE = -5mA,
V
MHz
CE
f = 100MHz
⎯
⎯
© Diodes Incorporated
July 2012
Page 4
P, P
OWER
P
T
O
C
O
CTO
R C
U
R
REN
T
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q2) (@T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
ON CHARACTERISTICS (Note 6)
Gate Source Threshold Voltage
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
Forward Transconductance
Gate Pull-Down Resistor, +/- 35%
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*
Turn-On Delay Time
Turn-Off Delay Time
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
aximum Pulsed Drain-Source Diode Forward Current
* Pulse Test: Pulse width, tp <300µs, Duty Cycle, d ≤0.02
350
Note 5
300
250
N (mW)
I
200
A
150
DISSI
100
V
= +25°C, unless otherwise specified.)
A
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
V
DS(on)
I
D(on)
R
DS(on)
g
FS
R3
C
iss
C
oss
C
rss
td
(on)
td
(off)
V
SD
I
S
I
SM
60
⎯ ⎯
⎯ ⎯
⎯ ⎯
1 1.6 2.5 V
⎯
⎯
500
⎯
⎯
80 260
⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
(mA)
LLE
⎯ ⎯
1 µA
0.95 mA
-0.95 mA
V
V
VGS =0V, VDS = 60V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VDS = VGS, ID = 0.25mA
0.09 1.5
0.6 3.75
⎯ ⎯
1.6 3
1.2 2
⎯
37
⎯
V
V
V
V
mA
V
V
Ω
VGS = 10V, ID = 500mA
mS
VDS ≥2*V
kΩ
50 pF
25 pF
V
5 pF
20 ns
40 ns
0.88 1.5 V
V
I
R
VGS = 0V, IS = 300 mA*
300 mA
800 mA
500
450
400
lb = 8mA
lb = 9mA
lb = 10mA
lb = 7mA
350
300
250
200
150
LMN400B01
= 0V, ID = 10µA
GS
= 5V, ID = 50mA
GS
= 10V, ID = 500mA
GS
= 10V,
GS
≥ 2*V
DS
= 5V, ID = 50mA
GS
= -25V, VGS = 0V, f = 1MHz
DS
= 30V, VGS =10V,
DD
= 200mA,
D
= 25Ω, RL = 150Ω
G
lb = 6mA
lb = 5mA
DS(ON)
DS(ON)
lb = 4mA
, ID = 200 mA
⎯
⎯
⎯
T= 25°C
A
lb = 3mA
lb = 2mA
lb = 1mA
D
50
100
C
I,
50
0
0
25
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Max Power Dissipation vs. Ambient T emperature
A
LMN400B01
Document number: DS30699 Rev. 8 - 2
50
75
100
125
150
175
4 of 9
www.diodes.com
0
00.5
1.5
1.0
V COLLECTOR VOLTAGE(V)
CE_SAT
2.0
2.5 3.0
3.5
4.0
Fig. 4 Output Current vs.
Voltage Drop (Pass Element PNP)
© Diodes Incorporated
5.04.5
5.5
July 2012
Page 5
C
O
CTO
R VOLT
G
C
O
CTO
R VOLT
G
T
TER VOLTAG
T
TER VOLTAG
C C
URR
T
G
LMN400B01
Pre-Biased PNP Transistor Characteristics
I/I = 10
CB
I/I = 20
CB
E (V)
A
LLE
CE(SAT)
V,
E (V)
T = 125 C
°
A
T = 150 C
°
A
I , COLLECTOR CURRENT (A)
C
I/I = 10
CB
Fig. 5 V vs. I
CE(SAT) C
T= -55C
A
T= 25C
A
T= 85C
°
A
°
°
E (V)
A
LLE
CE(SAT)
V,
E (V)
T = 125 C
°
A
T = 150 C
°
A
I , COLLECTOR CURRENT (A)
C
I/I = 10
CB
V = 5V
CE
Fig. 6 V vs. I
CE(SAT) C
T= 25C
A
T= 85C
°
A
T=-55C
°
A
°
BE(SAT)
V , BASE EMI
AIN
EN
FE
h, D
T = 125 C
°
A
T = 150 C
°
A
I , COLLECTOR CURRENT (mA)
C
V = 5V
CE
Fig. 7 V vs. I
T = 125 C
A
BE(SAT) C
T = 150 C
°
A
°
T= 25C
A
T=-55C
A
T= 85C
A
°
°
T= -55C
T= 25C
A
T= 85C
A
°
°
A
T= -55C
T = 125 C
°
°
°
BE(ON)
V , BASE EMI
I , COLLECTOR CURRENT (mA)
C
A
T = 150 C
°
A
Fig. 8 V vs. I
BE(ON) C
T= 25C
A
T= 85C
A
°
A
°
°
I , COLLECTOR CURRENT (mA)
C
Fig. 9 h vs. I
LMN400B01
Document number: DS30699 Rev. 8 - 2
FE C
5 of 9
www.diodes.com
July 2012
© Diodes Incorporated
Page 6
R
A
N CUR
R
N
T
A
RAIN CUR
REN
2
LMN400B01
Typical N-Channel MOSFET (Q2) Characteristics
T = 25C
°
A
)
(
1.0
V = 8V
E
I
D
I, D
GS
0.8
0.6
0.4
0.2
0
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 10V
GS
V = 5V
V = 4V
GS
V = 3V
GS
V = 6V
GS
GS
Fig. 10 Output Characteristics
2.
V = 10V
2
DS
V= V
DS GS
I = 0.25mA
D
Pulsed
1.8
T (A)
D
I, D
V = 10V
DS
0
1
V , GATE-SOURCE VOLTAGE (V)
GS
2
Fig. 11 Transfer Characteristics
V = 5V
GS
Pulsed
T = 125 C
A
T= 85C
A
3
T=-55C
A
T= 25C
°
A
°
°
T= 150C
4
°
°
A
5
1.6
1.4
1.2
1.0
-75
J
-25
025
-50
T , JUNCTION TEMPERATURE (°C)
Fig. 12 G at e Threshold Volt age
vs. Junc tion Temperature
4
V = 10V
GS
Pulsed
T = 125C
°
A
T = 85C
T = 25C
A
T = -55C
A
50 75 100
T = 150C
°
A
°
A
°
°
125 150
T = 125 C
°
A
I DRAIN CURRENT (A)
,
D
T = -55C
°
A
T = 150 C
A
T = 85C
A
T = 25C
A
°
°
°
Fig. 13 Static Drain-Source On-Resistance
E
)
C
R
W
(
U
E
O
C
S
-
N
N
A
I
T
A
S
R
I
D
S
E
C
I
R
T
E
A
T
T
A
S
T
,
)
S
N
-
O
N
(
S
O
D
R
I= 50mA
D
vs. Drain Cur r ent
I= 115mA
D
T = 25C
°
A
Pulsed
0
1
I , DRAIN CURRENT (A)
D
Fig. 14 S t atic Drain-S ource On-R esi st ance
vs. Drain C urrent
LMN400B01
Document number: DS30699 Rev. 8 - 2
6 of 9
www.diodes.com
V GATE SOURCE VOLTAGE (V)
GS,
Fig. 15 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
© Diodes Incorporated
July 2012
Page 7
LMN400B01
Typical N-Channel MOSFET (Q2) Characteristics (cont.)
V = 0V
GS
Pulsed
T = 150 C
A
°
T= -55C
°
A
T = 125 C
A
T = 85C
A
T = 25C
A
T = 0C
°
A
T = -25C
A
°
°
°
°
0
V = 10V
GS
Pulsed
T, JUNCTION TEMPERATURE ( C)
j
St atic Drain- Source On-St at e R esistan ce
Fig. 16
vs. Junc tion Temperature
I = 300mA
D
I = 150mA
D
°
DR
I , REVERSE DRAIN CURRENT (A)
V = 10V
GS
S
I , REVERSE DRAIN CURRENT (A)
LMN400B01
Document number: DS30699 Rev. 8 - 2
V= 0V
GS
T = 25°C
A
Pulsed
FS
g , FORW ARD TRANSCONDUCTANCE (mS)
1
7 of 9
www.diodes.com
T= -55C
A
T = 150 C
A
°
°
T= -25C
A
T = 125 C
A
°
T= 25C
°
A
°
T= 85C
°
A
July 2012
© Diodes Incorporated
Page 8
Application Details
PNP Transistor and ESD Protected N-MOSFET integrated as
one in LMN400E01 can be used as a discrete entity for general
applications or as an integrated circuit to function as a Load
Switch. When it is used as the latter as shown in Figure 20,
various input voltage sources can be used as long as it does
not exceed the maximum ratings of the device. These devices
are designed to deliver continuous output load current up to a
maximum of 400mA. The MOSFET Switch draws no current,
hence the loading of the control circuitry is prevented. Care
must be taken for higher levels of dissipation while designing
for higher load conditions. These devices provide high power
and also consume less space. The product mainly helps in
optimizing power usage, thereby conserving battery life in a
controlled load system like portable battery powered
applications. (Please see Figure 21 for one example of a
typical application circuit used in conjunction with a voltage
regulator as a part of power management system).
U1
Vin
Control Logic
Circuit (PIC,
Comparator
etc)
GND
OUT1
5V Supply
Vin
Control
Figure 21 Typical Application Circuirt
Package Outline Dimensions
LMN400B01
Document number: DS30699 Rev. 8 - 2
K
J
A
B C
H
M
D
L
Vin
Control
Load Switch
U2
1
E_Q1
2
G_Q2
3
D_Q2
www.diodes.com
C_Q1
B_Q1
S_Q2
LMN400B01
Diodes Inc.
8 of 9
E
Q1 PNP
R1
10K
B
R2 220
D
Figure 20 Circuit Diagram
U3
Vout
6
5
4
Gnd
IN OUT
Voltage Regulator
SOT26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
⎯ ⎯
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°
α
All Dimensions in mm
LMN400B01
C
S
Q2 NMOSFET
G
37K
Point of
Load
0.95
⎯
V
OUT
LOAD
July 2012
© Diodes Incorporated
Page 9
LMN400B01
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
G
Z
Y
X
C2
C2
C1
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z
G
X
Y
C1 2.40
C2
3.20
1.60
0.55
0.80
0.95
LMN400B01
Document number: DS30699 Rev. 8 - 2
9 of 9
www.diodes.com
July 2012
© Diodes Incorporated
Loading...