Diodes LMN400B01 User Manual

Product Summary

Reference

Q1 PNP Transistor 10K 220
Q2 N-MOSFET

Device

Type

R1

(NOM)

⎯ ⎯

R2

(NOM)

R3

⎯

Figure

2

(NOM)

37K 2

Description

LMN400B01 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a discrete
pass transistor with stable V
voltage and can support continuous maximum current of 400 mA . It
also contains a discrete N-MOSFET with gate pull-down resistor that
can be used as control. The component devices can be used as a
part of a circuit or as a stand alone discrete device.

which does not depend on input

CE(SAT)

6

1

2

3

Top View

5

4

LMN400B01

400mA LOAD SWITCH FEATURING PNP TRANSISTOR

AND N-MOSFET WITH GATE PULL-DOWN RESISTOR

Features

• Voltage Controlled Small Signal Switch

• N-MOSFET with Gate Pull-Down Resistor

• Ideally Suited for Automated Assembly Processes

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.016 grams (approximate)

Top View

Internal Schematic

e3

Ordering Information (Note 4)

Part Number

LMN400B01-7 SOT26 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Case Packaging

Marking Information

Date Code Key

Year 2006 2007 ….. 2012 2013 2014 2015 2016 2017

Code T U ….. Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

LMN400B01

Document number: DS30699 Rev. 8 - 2



PM3 = Product Type Marking Code,

PM3

YM

YM = Date Code Marking
Y = Year, e.g., Z = 2012
M = Month, e.g., 9 = September

1 of 9

www.diodes.com

© Diodes Incorporated

July 2012

LMN400B01

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)
Power Derating Factor above +100°C
Output Current

P

I

PD

DER

OUT

300 mW

2.4 mW/°C

400 mA

Thermal Characteristics

Characteristic Symbol Value Unit

Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note 5)

TJ, T

R

STG

JA

θ

-55 to +150
417

°C

°C/W

Maximum Ratings:
Pre-Biased PNP Transistor (Q1) (@T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current

= +25°C, unless otherwise specified.)

A

V

CBO

V

CEO

VCC

V

IN

I

C

-6 to +5 V

-400 mA

-50 V

-50 V

-50 V

Maximum Ratings:
ESD Protected N-Channel MOSFET (Q2) (@T

Characteristic Symbol Value Unit

Drain-Source Voltage
Drain Gate Voltage (RGS ≤1MΩ) V
Gate-Source Voltage Continuous

Pulsed (tp < 50µS)
Drain Current (Note 5) Continuous (VGS = 10V)

Pulsed (tp <10µS, Duty Cycle <1%)
Continuous Source Current

Note: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

LMN400B01

Document number: DS30699 Rev. 8 - 2

= +25°C, unless otherwise specified.)

A

V

DSS
DGR

V

GSS

I

D

I

S

2 of 9

www.diodes.com

60 V

60 V
+/-20
+/-40

115
800

V

mA

115 mA

© Diodes Incorporated

July 2012

Electrical Characteristics: Pre-Biased PNP Transistor (Q1) (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Ouput Current

I

CBO

I

CEO

V
V

(BR)CBO
(BR)CEO

V

I(OFF)

I

⎯ ⎯

O(OFF)

⎯ ⎯
⎯ ⎯

-50

-50

-0.3

⎯ ⎯
⎯ ⎯
⎯ ⎯

-500 nA

-1 µA

-1 µA

ON CHARACTERISTICS (Note 6)

-0.06 -0.15 V

-0.18 -0.30 V

-0.28 -0.60 V

⎯ ⎯
⎯ ⎯
⎯ ⎯ V
⎯ ⎯
⎯

-18 -45 mA

-1.2 -1.6 V

-1.9 -2.5

-5.25 -6.00

Collector-Emitter Saturation Voltage

DC Current Gain

Input On Voltage
Input Current
Base-Emitter Turn-on Voltage

Base-Emitter Saturation Voltage

V

CE(SAT)

h

FE

V

I(ON)

I

⎯

i

V

BE(ON)

V

BE(SAT)

⎯
⎯
⎯

55 220
55 260
55 265
55 225

-3.0 -1.5

⎯

⎯
⎯

Input Resistor (Base), +/- 30% R2 0.154 0.220 0.286
Pull-up Resistor (Base to VCC supply), +/- 30%

R1 7 10 13
Resistor Ratio (Input Resistor/Pullup resistor) R1/R2 36 45 55
SMALL SIGNAL CHARACTERISTICS

Gain Bandwidth Product

* Pulse Test: Pulse width, tp <300µs, Duty Cycle, d ≤ 0.02
Note: 6. Short duration pulse test used to minimize self-heating effect.

f

⎯

T

LMN400B01

Document number: DS30699 Rev. 8 - 2

www.diodes.com

3 of 9

200

⎯

LMN400B01

= +25°C, unless otherwise specified.)

A

VCB = -50V, IE = 0
VCE = -50V, IB = 0

V

IC = -10µA, IE = 0

V

IC = -2mA, IB = 0

V

VCE = -5V, IC = -100µA
VCC = -50V, VI = 0V

= -10mA, IB = -0.3mA

I

C

IC = -300mA, IB= -30mA
IC = -500mA, IB = -50mA

= -5V, IC = -50mA

V

CE

= -5V, IC = - 100mA

V

CE

= -5V, IC = -200 mA

CE

= -5V, IC = -400mA

V

CE

VDC VO = -0.3V, IIC = -2mA

VI = -5V
VCE = -5V, IC = -400mA

= -50mA, IB = -5mA

I

C

V

IC = -400mA, IB = -20mA
KΩ
KΩ

⎯ ⎯

= -10V, IE = -5mA,

V

MHz

CE

f = 100MHz

⎯
⎯

© Diodes Incorporated

July 2012