Diodes LMN200B02 User Manual
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LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V
which does not
CE(SAT)
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
1
2
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.006 grams (approximate)
Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure
DDTB142JU_DIE Q1 PNP Transistor 10K 470
DSNM6047_DIE (with Gate Pull-Down
Resistor)
Q2 N-MOSFET
Fig. 2 Schematic and Pin Configuration
Fig. 1: SOT-363
C_Q1
C
DDTB142JU_DIE
Q1
B
PNP
E
R1
10K
1
E_Q1 G_Q2 D_Q2
⎯ ⎯
3
B_Q1
R2
470
6
5
R3
37K
G
DSNM6047_DIE
2
4
S_Q2
456
3
S
Q2
NMOS
D
⎯
37K 2
2
Maximum Ratings, Total Device @T
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Power Derating Factor above 125°C
Output Current
Thermal Characteristics @T
Characteristic Symbol Value Unit
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3)
Notes: 1. No purposefully added lead.
DS30658 Rev. 7 - 2
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
A
PD
P
der
I
out
TJ,T
STG
R
JA
θ
1 of 9
www.diodes.com
200 mW
1.6 mW/°C
200 mA
-55 to +150 °C
625 °C/W
© Diodes Incorporated
LMN200B02
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1) @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current
V
CBO
V
CEO
VCC
V
I
in
C
+5 to -6 V
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2) @T
Characteristic Symbol Value Unit
Drain-Source Voltage
Drain Gate Voltage (RGS ≤1M Ohm) V
Gate-Source Voltage Continuous
Pulsed (tp<50 uS)
Drain Current (Page 1: Note 3) Continuous (Vgs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
Continuous Source Current
DS30658 Rev. 7 - 2
www.diodes.com
= 25°C unless otherwise specified
A
V
DSS
DGR
V
GSS
I
D
I
S
2 of 9
= 25°C unless otherwise specified
A
-50 V
-50 V
-50 V
-200 mA
60 V
60 V
+/-20
+/-40
115
800
V
mA
115 mA
LMN200B02
© Diodes Incorporated
Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Output Voltage
Ouput Current (leakage current same as I
) I
CEO
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
I(OFF)
V
O(OFF)
OH
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Equivalent On-Resistance*
DC Current Gain
Input On Voltage
Output Voltage (equivalent to V
CE(SAT) or VO(ON)
Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
V
CE(SAT)
R
CE(SAT)
h
FE
V
I(ON)
) VOL
I
V
BE(ON)
V
BE(SAT)
Input Resistor (Base), +/- 30% R2
Pull-up Resistor (Base to Vcc supply), +/- 30% R1
Resistor Ratio (Input Resistor/Pull-up
resistor) +/- 20%
R1/R2
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain Bandwidth Product)
Collector Capacitance, (C
* Pulse Test: Pulse width, tp<300 μS, Duty Cycle, d<=0.02
-Output Capacitance)
cbo
f
T
C
⎯ ⎯
⎯ ⎯
⎯
-50
-50
⎯
-4.9
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
60 150
60 215
60 245
60 250
-2.45 -0.7
⎯
⎯
i
⎯
⎯
⎯
⎯
⎯
⎯
⎯
C
⎯
-0.5 -1 mA
⎯ ⎯
⎯ ⎯
-0.55 -0.3 V
⎯ ⎯
-0.065 -0.15 V
-9 -28 mA
-1.13 -1.3 V
-3.2 -3.6
-4.6 -5.5
0.47
10
21
200
20
-100 nA
-500 nA
-500 nA
-0.15 V
-0.2 V
-0.2 V
-0.25 V
-0.25 V
-0.3 V
1.5
⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
⎯
⎯
⎯
⎯ ⎯ ⎯
⎯
⎯
= 25°C unless otherwise specified
A
VCB = -50V, IE = 0
V
= -50V, IB = 0
CE
V
= -5V, IC = 0
EB
V
IC = -10 uA, IE = 0
V
IC = -2 mA, IB = 0
VCE = -5V, IC = -100uA
V
= -5V, VB = -0.05V,
R
CC
L
= 1K
V
VCC = -50V, VI = 0V
= -10 mA, IB = -0.5 mA
I
C
= -50mA, IB = -5mA
I
C
IC = -20mA, IB = -1mA
= -100mA, IB= -10mA
I
C
= -200mA, IB= -10mA
I
C
IC = -200mA, IB = -20mA
Ω
IC = -200mA, IB = -10mA
= -5V, IC = -20 mA
V
CE
= -5V, IC = -50 mA
CE
= -5V, IC = -100 mA
CE
= -5V, IC = -200 mA
V
CE
V
VO = -0.3V, IC = -2 mA
V
= -5V, VB = -2.5V,
CC
Io/II = -50mA /-2.5mA
VI = -5V
VCE = -5V, IC = 200mA
= -50mA, IB = -5mA
I
V
KΩ
KΩ
MHz
pF
C
IC = -80mA, IB = -8mA
⎯
⎯
V
= -10V, IE = -5mA,
CE
f = 100MHz
V
= -10V, IE = 0A,
CB
f = 1MHz
DS30658 Rev. 7 - 2
3 of 9
www.diodes.com
LMN200B02
© Diodes Incorporated
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