Diodes LMN200B02 User Manual

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LMN200B02

200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET

WITH GATE PULL DOWN RESISTOR

General Description

LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable V

which does not

CE(SAT)

depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.

1

2

Features

• Voltage Controlled Small Signal Switch

• N-MOSFET with Gate Pull-Down Resistor

• Surface Mount Package

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 8

• Ordering Information: See Page 8

• Weight: 0.006 grams (approximate)

Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure

DDTB142JU_DIE Q1 PNP Transistor 10K 470
DSNM6047_DIE (with Gate Pull-Down

Resistor)

Q2 N-MOSFET

Fig. 2 Schematic and Pin Configuration

Fig. 1: SOT-363

C_Q1

C
DDTB142JU_DIE

Q1

B

PNP

E

R1

10K

1

E_Q1 G_Q2 D_Q2

⎯ ⎯

3

B_Q1

R2

470

6

5

R3

37K

G

DSNM6047_DIE

2

4

S_Q2

456

3

S

Q2
NMOS

D

⎯

37K 2

2

Maximum Ratings, Total Device @T

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Power Derating Factor above 125°C
Output Current

Thermal Characteristics @T

Characteristic Symbol Value Unit

Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to

One Heated Junction of PNP Transistor) (Note 3)

Notes: 1. No purposefully added lead.

DS30658 Rev. 7 - 2

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

= 25°C unless otherwise specified

A

= 25°C unless otherwise specified

A

PD

P

der

I

out

TJ,T

STG

R

JA

θ

1 of 9

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200 mW

1.6 mW/°C

200 mA

-55 to +150 °C
625 °C/W

© Diodes Incorporated

LMN200B02

Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1) @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current

V

CBO

V

CEO

VCC

V

I

in

C

+5 to -6 V

Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2) @T

Characteristic Symbol Value Unit

Drain-Source Voltage
Drain Gate Voltage (RGS ≤1M Ohm) V
Gate-Source Voltage Continuous

Pulsed (tp<50 uS)
Drain Current (Page 1: Note 3) Continuous (Vgs = 10V)

Pulsed (tp <10 uS, Duty Cycle <1%)
Continuous Source Current

DS30658 Rev. 7 - 2

www.diodes.com

= 25°C unless otherwise specified

A

V

DSS

DGR

V

GSS

I

D

I

S

2 of 9

= 25°C unless otherwise specified

A

-50 V

-50 V

-50 V

-200 mA

60 V

60 V
+/-20
+/-40

115
800

V

mA

115 mA

LMN200B02

© Diodes Incorporated

Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage

Output Voltage
Ouput Current (leakage current same as I

) I

CEO

I

CBO

I

CEO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

I(OFF)

V

O(OFF)

OH

ON CHARACTERISTICS

Collector-Emitter Saturation Voltage

Equivalent On-Resistance*

DC Current Gain

Input On Voltage
Output Voltage (equivalent to V

CE(SAT) or VO(ON)

Input Current
Base-Emitter Turn-on Voltage

Base-Emitter Saturation Voltage

V

CE(SAT)

R

CE(SAT)

h

FE

V

I(ON)

) VOL

I

V

BE(ON)

V

BE(SAT)

Input Resistor (Base), +/- 30% R2
Pull-up Resistor (Base to Vcc supply), +/- 30% R1
Resistor Ratio (Input Resistor/Pull-up

resistor) +/- 20%

R1/R2
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain Bandwidth Product)

Collector Capacitance, (C

* Pulse Test: Pulse width, tp<300 μS, Duty Cycle, d<=0.02

-Output Capacitance)

cbo

f

T

C

⎯ ⎯
⎯ ⎯
⎯

-50

-50

⎯

-4.9

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

⎯ ⎯

60 150

60 215

60 245

60 250

-2.45 -0.7
⎯

⎯

i

⎯
⎯
⎯
⎯
⎯

⎯

⎯

C

⎯

-0.5 -1 mA

⎯ ⎯
⎯ ⎯

-0.55 -0.3 V
⎯ ⎯

-0.065 -0.15 V

-9 -28 mA

-1.13 -1.3 V

-3.2 -3.6

-4.6 -5.5

0.47
10

21

200

20

-100 nA

-500 nA

-500 nA

-0.15 V

-0.2 V

-0.2 V

-0.25 V

-0.25 V

-0.3 V

1.5

⎯ ⎯
⎯ ⎯ V
⎯ ⎯ V
⎯ ⎯
⎯

⎯
⎯

⎯ ⎯ ⎯

⎯

⎯

= 25°C unless otherwise specified

A

VCB = -50V, IE = 0
V

= -50V, IB = 0

CE

V

= -5V, IC = 0

EB

V

IC = -10 uA, IE = 0

V

IC = -2 mA, IB = 0
VCE = -5V, IC = -100uA
V

= -5V, VB = -0.05V,

R

CC
L

= 1K

V

VCC = -50V, VI = 0V

= -10 mA, IB = -0.5 mA

I

C

= -50mA, IB = -5mA

I

C

IC = -20mA, IB = -1mA

= -100mA, IB= -10mA

I

C

= -200mA, IB= -10mA

I

C

IC = -200mA, IB = -20mA

Ω

IC = -200mA, IB = -10mA

= -5V, IC = -20 mA

V

CE

= -5V, IC = -50 mA

CE

= -5V, IC = -100 mA

CE

= -5V, IC = -200 mA

V

CE

V

VO = -0.3V, IC = -2 mA
V

= -5V, VB = -2.5V,

CC

Io/II = -50mA /-2.5mA
VI = -5V
VCE = -5V, IC = 200mA

= -50mA, IB = -5mA

I

V

KΩ
KΩ

MHz

pF

C

IC = -80mA, IB = -8mA

⎯
⎯

V

= -10V, IE = -5mA,

CE

f = 100MHz
V

= -10V, IE = 0A,

CB

f = 1MHz

DS30658 Rev. 7 - 2

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LMN200B02

© Diodes Incorporated

P, P

O

R

PAT

O

Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2) @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage, BV
Zero Gate Voltage Drain Current (Drain Leakage

Current)
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse

V

DSS

(BR)DSS

I

DSS

I

GSSF

I

GSSR

⎯ ⎯

⎯ ⎯
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply

Voltage)
Static Drain-Source On-State Voltage

On-State Drain Current

Static Drain-Source On-Resistance

Forward Transconductance

V

GS(th)

V

DS(on)

I

D(on)

R

DS(on)

g

FS

Gate Pull-Down Resistor, +/- 30% R3
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

⎯ ⎯

iss

C

oss

C

⎯ ⎯

rss

SWITCHING CHARACTERISTICS
Turn-On Delay Time

Turn-Off Delay Time

t

⎯ ⎯

D(on)

t

⎯ ⎯

D(off)

SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward

Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward

Current

Notes: 4. Short duration pulse test used to minimize self-heating effect.

350

V

SD

I

⎯ ⎯

S

I

SM

Typical Characteristics

60
⎯ ⎯

1 1.9 2.2 V

⎯
⎯

500

⎯
⎯

80 240
80 350

⎯

⎯ ⎯

⎯

⎯ ⎯

⎯ ⎯

0.10 1.5

0.15 3.75
⎯ ⎯

1.6 3

1.4 2

37

0.90 1.5 V

= 25°C unless otherwise specified

A

V

V

GS

1

0.95 mA

-0.95 mA

μA

V

GS

V

GS

V

GS

VDS = VGS, ID = 0.25mA
V

GS

V

GS

V

GS

V

DS

V

GS

VGS = 10V, ID = 500mA
V

DS

V

DS

⎯
⎯
⎯

V

mA

Ω

mS

KΩ

50 pF

V

25 pF

5 pF

20 ns
40 ns

DS

f = 1MHz

V

DD

= 200mA,

I

D

R

G

VGS = 0V, IS = 115 mA

115 mA

800 mA

= 0V, ID = 10μA
=0V, VDS = 60V
= 20V, VDS = 0V

= -20V, VDS = 0V

= 5V, ID = 50mA
= 10V, ID = 115mA
= 10V,

≥2XV

DS(ON)

= 5V, ID = 50mA

≥2XV
≥2XV

DS(ON)
DS(ON)

, ID = 115 mA
, ID = 200 mA

⎯

= -25V, VGS = 0V,

= 30V, VGS =10V,

= 25 Ohm, RL = 150 Ohm

⎯

⎯

300

250

N (mW)
I

200

150

DISSI
WE

100

D

(Note 3)

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75 100 125

150

175

Fig. 3 Max Power Dissipation vs.

Ambient Temperature (Tota l Device)

DS30658 Rev. 7 - 2

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LMN200B02

© Diodes Incorporated

C

O

CTO

R VO

T

G

C

O

CTO

R VOLT

G

T

TER VOLTAG

T

TER VOLTAG

C C

URREN

T

G

N

Typical Pre-Biased PNP Transistor (Q1) Characteristics

E (V)
A

L

LLE

CE(SAT)

V,

E (V)

I , COLLECTOR CURRENT (A)

C

Fig. 4 V vs. I

CE(SAT) C

E (V)
A

LLE

CE(SAT)

V,

E (V)

I , COLLECTOR CURRENT (A)

C

Fig. 5 V vs. I

CE(SAT) C

BE(SAT)

V , BASE EMI

1

10 100 1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 V vs. I

BE(SAT) C

BE(ON)

V , BASE EMI

I , COLLECTOR CURRENT (mA)

C

Fig. 7 V vs. I

BE(ON) C

AI

FE

h, D

I , COLLECTOR CURRENT (mA)

C

Fig. 8 h vs. I

FE C

DS30658 Rev. 7 - 2

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LMN200B02

© Diodes Incorporated

RAIN CUR

REN

T

R

CUR

RENT

2

Typical N-Channel MOSFET (Q2) Characteristics

(A)

D

I, D

1.0

0.8

0.6

0.4

0.2

2.

2.0

1.8

1.6

1.4

1.2

0

01

2

V , DRAIN-SOURCE VOLTAGE (V)

345

DS

6

Fig. 9 Output Characteristics

(A)

AIN

D

I, D

7

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 10 Transfer Characteristics

5

E

)

C

4

Ω

R

(

U

E

O

C

S

-

N

N

A

I

3

T

A

S

I

R

S

D

E

C

R

I
T

2

E

A

T

T

A

S

T

,

)

S

n

-

o

(

N

S

1

O

D

R

0

-75

-50

T , JUNCTION TEMPERATURE (°C)

0 255075100125150

-25

J

Fig. 11 Gate Threshold Voltage

vs. Junction Temperature

0

I , DRAIN CURRENT (A)

D

Fig. 12 Static Drain-Source On-Resistance

vs. Drain C ur r ent

4

E

)

C

Ω

R

(

U

E

O

C

S

-

N

N

A

I

T

A

S

I

R

S

D

E

C

R

I
T

E

A

T

T

A

S

T

,

)

S

n

-

o

(

N

S

O

D

R

E

)

C

Ω

R

(

U

E

O

C

S

-

N

N

A

I

T

A

S

I

R

S

D

E

C

R

I
T

E

A

T

T

A

S

T

,

)

S

n

-

o

(

N

S

O

D

R

0

I , DRAIN CURRENT (A)

D

1

Fig. 13 Static Drain-Source On- R e si s t ance

vs. Drain Current

DS30658 Rev. 7 - 2

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V GATE SOURCE VOLT AGE (V)

,

GS

Fig. 14 Static Drain-Source On-Resistance

vs. Gate- Source Volt age

© Diodes Incorporated

LMN200B02

Ω

ON-STATE RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

S

I , REVERSE DRAIN CURRENT (A)

T, JUNCTION TEMPERATURE ( C)

j

Fig. 15

St at ic Drain-So ur ce On-S tate Resistance

vs. Junction Temperature

S

I , REVERSE DRAIN CURRENT (A)

0.5

11.5

°

FS

g , FORWARD TRANSCONDUCTANCE (mS)

2

2.5

DS30658 Rev. 7 - 2

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LMN200B02

© Diodes Incorporated

Application Details

PNP Transistor (DDTB142JU) and N-MOSFET
(DSNM6047) with gate pull-down resistor integrated
as one in LMN200B02 can be used as a discrete
entity for general purpose applications or as an
integrated circuit to function as a Load Switch. When
it is used as the latter as shown in Fig 19, various
input voltage sources can be used as long as it does
not exceed the maximum ratings of the device.
These devices are designed to deliver continuous
output load current up to a maximum of 200 mA. The
MOSFET Switch draws no current, hence loading of
control circuit is prevented. Care must be taken for
higher levels of dissipation while designing for higher
load conditions. These devices provide high power
and also consume less space. The product mainly
helps in optimizing power usage, thereby conserving
battery life in a controlled load system like portable
battery powered applications. (Please see Fig. 20
for one example of a typical application circuit used
in conjunction with voltage regulator as a part of a
power management system)

U1

Vin

Control Logic
Circuit ( PI C,
Comparator
etc)

GND

Vin

10K

Control

Typical Application Circuit

5v Supply

Load Swi tch

U3

Vin

1

OUT1

Control

E_Q1

2

G_Q2

3

D_Q2

C_Q1
B_Q1
S_Q2

LNM200B02

Diodes Inc.

Fig. 20

DDTB142JU

E

Q1 PNP

R1

B

R2 470

D

DSNM6047

Q2 NMOS

Fig. 19 Circuit Diagram

Vout

6
5
4

Gnd

IN OUT

Voltage Regulator

R3

Vout

Point of
Load

LOAD

C

S

G

37K

U2

Ordering Information (Note 5)

Device

LMN200B02-7 SOT-363 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Packaging Shipping

Marking Information

PM2

PM2 = Product Type Marking Code,
YM = Date Code Marking
Y = Year (ex: T = 2006)

YM

M = Month (ex: 9 = September)

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code T U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DS30658 Rev. 7 - 2

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LMN200B02

© Diodes Incorporated

Mechanical Details

K

J

A

SOT-363

Dim Min Max

A 0.10 0.30

B C

B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45

H

H 1.80 2.20
J 0 0.10

M

K 0.90 1.00
L 0.25 0.40

M 0.10 0.22

D

L

F

α

0° 8°

All Dimensions in mm

Suggested Pad Layout

G

Z

Y

X

C2

C2

C1

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6
C1 1.9
C2 0.65

DS30658 Rev. 7 - 2

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LMN200B02

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2009, Diodes Incorporated

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DS30658 Rev. 7 - 2

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LMN200B02

© Diodes Incorporated