Diodes LMN200B01 User Manual

Lead-free Green

200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MO SFET

S

D

G

C

E

B

Q2
NMOS

R3

37K

R2

470

Q1
PNP

R1

10K

1

2

3

4

56

C_Q1

E_Q1

G_Q2

D_Q2

S_Q2

B_Q1

DSNM6047_DIE

DDTB142JU_DIE

Fig. 2 Schematic and Pin Configuration

1

2

3

4

5

6

TCUDORP WEN

General Description

• LMN200B01 is best suited for applications where the load

needs to be turned on and off using control circuits like
micro-controllers, comparators, etc., particularly at a point
of load. It features a discrete pass transistor with stable
V

which does not depend on the input voltage and

CE(SAT)

can support continuous maximum current of 200 mA. It
also contains a discrete N-MOSFET that can be used as
control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part
of a circuit or as a stand alone discrete device.

LMN200B01

WITH PULL DOWN RESISTOR

Features

Fig. 1: SOT-26

• Voltage Controlled Small Signal Switch

• N-MOSFET with Gate Pull-Down Resistor

• Surface Mount Package

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/ROHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking & Type Code Information: See Last Page

• Ordering Information: See Last Page

• Weight: 0.016 grams (approximate)

Sub-Components Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure

DDTB142JU_DIE
DSNM6047_DIE

Q1 PNP Transistor 10K 470  2
Q2 N-MOSFET   37K 2

Maximum Ratings, Total Device

Characteristic Symbol Value Unit

Power Dissipation (Note 3)
Power Derating Factor above 125°C
Output Current

Thermal Characteristics

Characteristic Symbol Value Unit

Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Note3)

(Equivalent to one heated junction of PNP transistor)

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS30651 Rev. 7 - 2 1 of 10 LMN200B01

@ TA = 25°C unless otherwise specified

P

d

P

der

I

out

Tj,T

stg

R

θJA

300

2.4 mW/°C

200 mA

-55 to +150 °C
417 °C/W

www.diodes.com  Diodes Incorporated

mW

TCUDORP WEN

Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current

Sub-Component Device:
N-MOSFET with Gate Pull-Down Resistor (Q2)

Characteristic Symbol Value Unit

Drain-Source Voltage
Drain Gate Voltage (RGS ≤1MΩ) V

Gate-Source Voltage Continuous
Pulsed (tp<50 uS) +/-40
Drain Current (Page 1: Note 3) Continuous (Vgs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%) 800
Continuous Source Current

V

CBO

V

CEO

V

cc

V

in

I

C

@ TA = 25°C unless otherwise specified

V

DSS
DGR

V

GSS

I

D

I

S

@ TA = 25°C unless otherwise specified

-50 V

-50 V

-50 V

+5 to -6 V

-200 mA

60 V
60 V

+/-20

115

115 mA

V

mA

DS30651 Rev. 7 - 2 2 of 10 LMN200B01

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TCUDORP WEN

Electrical Characteristics: Pre-Biased PNP Transistor (Q1)

@ TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Output Voltage
Output Current (leakage current same as I

) I

CEO

I

CBO

I

CEO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

I(OFF)

V

O(OFF)

  -100 nA
  -500 nA
 -0.5 -1 mA

-50   V

-50   V

 -0.55 -0.3 V

-4.9   V

OH

  -500 nA

VCB = -50V, IE = 0
V
V
IC = -10µA, IE = 0
IC = -2 mA, IB = 0
VCE = -5V, IC = -100µA
VCC = -5V, VB = -0.05V, RL = 1K
VCC = -50V, VI = 0V

ON CHARACTERISTICS

IC = -10 mA, IB = -0.5 mA
IC = -50mA, IB = -5mA
IC = -20mA, IB = -1mA
IC = -100mA, IB= -10mA
IC = -200mA, IB= -10mA
IC = -200mA, IB = -20mA
IC = -200mA, IB = -10mA
VCE = -5V, IC = -20 mA
VCE = -5V, IC = -50 mA
VCE = -5V, IC = -100 mA
VCE = -5V, IC = -200 mA
VO = -0.3V, IC = -2 mA
VCC = -5V, VB = -2.5V,

Io/I

VI = -5V
VCE = -5V, IC = -200mA
IC = -50mA, IB = -5mA

V

IC = -80mA, IB = -8mA

Collector-Emitter Saturation Voltage

Equivalent on-resistance*

DC Current Gain

Input On Voltage
Output Voltage (equivalent to V

CE(SAT)

Input Current
Base-Emitter Turn-on Voltage

Base-Emitter Saturation Voltage

or V

) V

O(on)

V

CE(SAT)

R

CE(SAT)

h

V

I(ON)

V

BE(ON)

V

BE(SAT)

  -0.15 V
  -0.2 V
  -0.2 V
  -0.25 V
  -0.25 V
  -0.3 V
  1.5 Ω
60 150  

FE

60 215  
60 245  
60 250  

-2.45 -0.7  V

OL

I

 -0.065 -0.15 V
 -9.2 -13 mA

i

 -1.125 -1.3 V
 -3.2 -3.6
 -4.55 -5.5

Input Resistor (Base), +/- 30% R2  0.47  KΩ 
Pull-up Resistor (Base to Vcc supply), +/- 30% R1  10  KΩ 
Resistor Ratio (Input Resistor/Pullup resistor), +/ -20% R1/R2  21   

SMALL SIGNAL CHARACTERISTICS

Transition Frequency (gain bandwidth product)

Collector capacitance, (Ccbo-Output Capacitance)

f

T

C

 200  MHz

 20  pF

C

VCE = -10V, IE = -5mA,
f = 100MHz

VCB = -10V, IE = 0A,
f = 1MHz

= -50V, IB = 0

CE

= -5V, IC = 0

EB

-50mA /-2.5mA

I =

* Pulse Test: Pulse width, tp<300 µS, Duty Cycle, d<=0.02.

DS30651 Rev. 7 - 2 3 of 10 LMN200B01

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