Diodes LBN150B01 User Manual

Please click here to visit our online spice models database.

150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS

General Description

• LMN150B01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point of
load. It features a discrete PNP pass transistor with stable
V

which does not depend on the input voltage and can

ce_sat

support maximum continuous current of 150 mA up to
125 °C (see fig. 1). It also contains a discrete NPN that can
be used as a control. The component devices can be used
as a part of a circuit or as standalone discrete devices.

Features

• Epitaxial Planar Die Construction

• Ideally

• Lead Free By

• "Green" Dev

NEW PRODUCT

Suited for Automated Assembly Processes

Design/ROHS Compliant (Note 1)

ice (Note 2)

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic. "Green Molding"

Compound. UL Flammability

• Moisture Sensitivity

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL- STD -202, Method 208

• Marking Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.016 grams (approximate)

: Level 1 per J-STD-020C

Classification Rating 94V-0

LBN150B01

6

5

4

1

2

3

SOT-26

EQ2CQ1

6

Q1

1

EQ1

Schematic and Pin Configuration

5

23

BQ1

CQ2

4

Q2

BQ2

Maximum Ratings, Total Device @T

Characteristic Symbol Value Unit

Output Current

Thermal Characteristics @T

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of PNP transistor)

Junction Operation and Storage Temperature Range

Notes: 1. No purposefully added lead.

DS30749 Rev. 4 - 2 1 of 7

2 . Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Page 7.

= 25°C unless otherwise specified

A

= 25°C unless otherwise specified

A

I

out

P

D

P

der

R

JA

θ

TJ, T

STG

www.diodes.com

150 mA

300 mW

2.33
417

-55 to +150

mW/°C Power Derating Factor above 120 °C

°C/W

°C

LBN150B01

© Diodes Incorporated

Maximum Ratings: Discrete PNP Transistor (Q1) @T

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - continuous (Note 4)

V

CBO

V

CEO

V

EBO

I

C

Maximum Ratings: Discrete NPN Transistor (Q2) @T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Output Current - continuous (Note 4)

V

CBO

V

CEO

V

EBO

I

C

Electrical Characteristics: Discrete PNP Transistor (Q1) @T

NEW PRODUCT

OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
ON CHARACTERISTICS (Note 4)

DC Current Gain

Collector-Emitter Saturation Voltage

Equivalent on-resistance
Base-Emitter Turn-on Voltage

Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product

Noise Figure NF
SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

Notes: 4. Short duration pulse test used to minimize self-heating effect.

Characteristic Symbol Min Max Unit Test Condition

V
V
V

I

CEX

I

I

CBO

I

CEO

I

EBO

h

V

CE(SAT)

R

CE(SAT)

V

BE(ON)

V

BE(SAT)

C

C

h
h
h

h

CBO
CEO
EBO

BL

FE

OBO

IBO

IE

RE

FE

OE

f

T

t

d

t

r

t

s

t

f

-40

-40

-6

⎯
⎯
⎯
⎯
⎯

105
110
120

90
32
10

⎯
⎯
⎯
⎯
⎯
⎯
⎯

⎯
⎯

2 12

0.1 10 x 10E-4

100 400

3 60

250

⎯

⎯
⎯
⎯
⎯

⎯
⎯
⎯

-50 nA

-50 nA

-50 nA

-50 nA

-50 nA

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

-0.08

-0.15

-0.5

2.5

-0.92 V

-0.95

-1.1

4 pF
8 pF

⎯

4 dB

35 ns
35 ns

225 ns

75 ns

= 25°C unless otherwise specified

-40 V

-40 V

-6 V

-200 mA

= 25°C unless otherwise specified

A

60 V
40 V

6 V

200 mA

= 25°C unless otherwise specified

A

V
V
V

V

Ω

V

= -10uA, IE = 0

I

C

= -1.0mA, IB = 0

I

C

= -10μA, IC = 0

I

E

= -30V, V

V

CE

= -30V, V

V

CE

= -30V, IE = 0

V

CB

= -30V, IB = 0

V

CE

= -5V, IC = 0

V

EB

V

= -1V, IC = -100 μA

CE

V

= -1V, IC = -1 mA

CE

= -1V, IC = -10 mA

V

CE

V

= -1V, IC = -50 mA

CE

= -1V, IC = -100 mA

V

CE

V

= -1V, IC = -200 mA

CE

= - 10 mA, IB = -1 mA

I

C

= -50mA, IB = -5mA

I

C

= -200mA, IB = -20mA

I

C

= -200mA, IB = -20mA

I

C

= -5V, IC = -200mA

V

CE

= -10mA, IB = -1mA

I

C

= -50mA, IB = -5mA

I

C

= -5.0 V, f = 1.0 MHz, IE = 0

V

CB

= -5.0 V, f = 1.0 MHz, IC = 0

V

EB

K Ω

= 1.0V, Ic = 10mA, f = 1.0 KHz

V

⎯

CE

μS

MHz

= - 20V, IC = -10mA, f = 100 MHz

V

CE

= - 5V, Ic = -100 uA, Rs = 1Ω,

V

CE

f =1 KHz

= -3.0 V, IC = -10 mA,

V

CC

= 0.5V, IB1 = -1.0 mA

V

BE(OFF)

= -3.0 V, IC = -10 mA,

V

CC

= IB2 = -1.0 mA

I

B1

EB(OFF)
EB(OFF)

= -3.0V
= -3.0V

DS30749 Rev. 4 - 2 2 of 7

www.diodes.com

LBN150B01

© Diodes Incorporated

P, P

O

R

P

T

O

N

Electrical Characteristics: Discrete NPN Transistor (Q2) @T

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
ON CHARACTERISTICS (Note 4)

DC Current Gain

NEW PRODUCT

Collector-Emitter Saturation Voltage

Equivalent on-resistance
Base-Emitter Turn-on Voltage

Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS

Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product

Noise Figure
SWITCHING CHARACTERISTICS

Delay Time
Rise Time

Characteristic Symbol Min Max Unit Test Condition

V
V
V

I

CEX

I

I

CBO

I

CEO

I

EBO

h

V

CE(SAT)

R

CE(SAT)

V

BE(ON)

V

BE(SAT)

C

C

h
h
h

h

NF

CBO
CEO
EBO

BL

FE

OBO

IBO

IE

RE

FE

OE

f

T

t

d

t

r

60
40

6

⎯
⎯
⎯
⎯
⎯

150
170
160

70
30
12

⎯
⎯
⎯
⎯
⎯
⎯
⎯

⎯
⎯

2 12

0.1 10 x 10E-4

100 400

3 60

250

⎯

⎯
⎯

⎯
⎯
⎯

50 nA
50 nA
50 nA
50 nA
50 nA

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

0.08

0.16

0.36

1.8

0.98 V

0.95

1.1

4 pF
8 pF

⎯

4 dB

35 ns
35 ns

= 25°C unless otherwise specified

A

V
V
V

V

Ω

V

= 10uA, IE = 0

I

C

= 1.0mA, IB = 0

I

C

= 10μA, IC = 0

I

E

= 30V, V

V

CE

= 30V, V

V

CE

= 30V, IE = 0

V

CB

= 30V, IB = 0

V

CE

= 5V, IC = 0

V

EB

V

= 1V, IC = 100 μA

CE

= 1V, IC = 1 mA

V

CE

V

= 1V, IC = 10 mA

CE

V

= 1V, IC = 50 mA

CE

V

= 1V, IC = 100 mA

CE

V

= 1V, IC = 200 mA

CE

= 10 mA, IB = 1 mA

I

C

= 50mA, IB = 5mA

I

C

= 200mA, IB = 20mA

I

C

= 200mA, IB = 20mA

I

C

= 5V, IC = 200mA

V

CE

= 10mA, IB = 1mA

I

C

= 50mA, IB = 5mA

I

C

= 5.0 V, f = 1.0 MHz, IE = 0

V

CB

= 5.0 V, f = 1.0 MHz, IC = 0

V

EB

EB(OFF)
EB(OFF)

= 3.0V
= 3.0V

K Ω

= 1.0V, Ic = 10mA, f = 1.0 KHz

V

⎯

CE

μS

MHz

= 20V, IC = 0mA, f = 100 MHz

V

CE

= 5V, Ic = 100 uA, Rs = 1Ω,

V

CE

f =1 KHz

= -3.0 V, IC = 10 mA,

V

CC

= 0.5V, IB1 = 1.0 mA

V

BE(OFF)

Typical Characteristics

350

300

250

(mW)
I

200

A

150

DISSI

100

WE

D

50

0

25

0

50

T , AMBIENT TEMPERATURE (°C)

A

Fig. 1 Max Power Dissipation vs Ambient T emperature

75

100

125 150

175

DS30749 Rev. 4 - 2 3 of 7

www.diodes.com

1,000

100

10

C

I , COLLECTOR CURRENT (mA)

1

0.1 1
V , COLLECTOR EMITTER CURRENT (V)

CE

Fig. 2 Safe Operating Area

10

100

LBN150B01

© Diodes Incorporated