Diodes KBP2005G, KBP210G User Manual

E

Features

Glass Passivated Die Construction

·

High Case Dielectric Strength of 1500V

·

Low Reverse Leakage Current

·

Surge Overload Rating to 65A Peak

·

Ideal for Printed Circuit Board Applications

·

UL Listed Under Recognized Component Index, File

·

Number E94661

Lead Free Finish, RoHS Compliant (Note 3)

·

RMS

Mechanical Data

Case: KBP

·

Case Material: Molded Plastic. UL Flammability

·

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminals: Finish - Tin. Plated Leads, Solderable per

·

MIL-STD-202, Method 208

Polarity: Marked on Body

·

Ordering Information: See Last Page

·

Marking: Type Number

·

Weight: 1.52 grams (approximate)

·

e

3

KBP2005G - KBP210G

2.0A GLASS PASSIVATED BRIDGE RECTIFIER

KBP

Dim Min Max

14.25 14.75

A

L

J

A

+

_

H

G

K

M

B

N

C

D

P

All Dimensions in mm

B

C

D

E

G

H

J

K

L

M

N

P

10.20 10.60

2.29 Typical

14.25 14.73

3.56 4.06

0.76 0.86

1.17 1.42

2.8 X 45°
Chamfer

0.80 1.10

3.35 3.65

3° Nominal

2° Nominal

0.30 0.64

Maximum Ratings and Electrical Characteristics

Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Characteristic Symbol

Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ TC= 105°C

Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load

Forward Voltage per element @ IF= 2.0A

Peak Reverse Current @ TC= 25°C
at Rated DC Blocking Voltage @ T

Typical Total Capacitance per Element (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

Notes: 1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see

= 125°C

C

V

RRM

V

RWM

V

V

R(RMS)

I

I

FSM

V

I

RM

C

R

qJC

T

j,TSTG

R

O

FM

T

@ TA= 25°C unless otherwise specified

KBP

2005G

KBP

201G

50 100 200 400 600 800 1000 V

35 70 140 280 420 560 700 V

KBP

202G

EU Directive Annex Notes 5 and 7.

KBP

204G

-65 to +150 °C

206G

2.0 A

65 A

1.1 V

5.0

500

25 pF

14 °C/W

KBP

KBP

208G

KBP

210G

Unit

µA

DS21205 Rev. 10 - 2 1 of 3 KBP2005G-KBP210G

www.diodes.com

ã Diodes Incorporated

10

g

100

g

100

g

10,000

g

2.0

g

1.5

1.0

Ambient

0.5

, AVERAGE RECTIFIED CURRENT (A)

O

I

0

0 50 100 150

T, TEMPERATURE (°C)

Fi

. 1 Forward Current DeratingCurve

80

60

Case

T = 150°C

j

Single Half
Sine Wave

Lead

T = 150°C

J

1.0

0.1

F

I , INSTANTANEOUS FORWARD CURRENT (A)

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

.2 Typical Forward Characteristics

Fi

10

T=25°C

J

T=25°C

j

f=1MHz

40

20

FSM

I , PEAK FORWARD SURGE CURRENT (A)

0

1 10 100

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Forward

Sur

e Current

1000

100

10

1.0

0.1

T = 125°C

j

T = 150°C

j

T = 100°C

j

T=25°C

j

T

C , TOTAL CAPACITANCE (pF)

1

1 10 100

V , REVERSE VOLTAGE (V)

R

.4 Typical Total Capacitance, Per Element

Fi

R

0.01

I , INSTANTANEOUS REVERSE CURRENT (mA)

0 20 40 60 80 100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fi

.5 Typical Reverse Characteristics

DS21205 Rev. 10 - 2 2 of 3 KBP2005G-KBP210G

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