Diodes KBP005G, KBP10G User Manual
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KBP005G - KBP10G
1.5A GLASS PASSIVATED BRIDGE RECTIFIER
Features
• Glass Passivated Die Construction
• High Case Dielectric Strength of 1500V
• Low Reverse Leakage Current
• Surge Overload Rating to 40A Peak
• Ideal for Printed Circuit Board Applications
• UL Listed Under Recognized Component Index, File
Number E94661
• Lead Free Finish, RoHS Compliant (Note 2)
RMS
Mechanical Data
• Case: KBP
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Terminals: Finish – Matte Tin. Solderable per
MIL-STD-202, Method 208
• Polarity: As Marked on Body
• Marking: Type Number
• Weight: 1.52 grams (approximate)
Maximum Ratings and Electrical Characteristics @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC = 105°C IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage per element @ IF = 1.5A VFM
Peak Reverse Current @TC = 25°C
at Rated DC Blocking Voltage @ TC = 125°C
Typical Total Capacitance per (Note 1)
Typical Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS21203 Rev. 12 - 2
2. RoHS revision 13.2.2003. Glass and high tempe rature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
3. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
J
A
+
H
G
E
KBP
005G
V
RRM
V
RWM
VR
V
R(RMS)
I
FSM
IRM
CT
R
JC
θ
TJ, T
STG
1 of 3
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KBP
Dim Min Max
L
K
M
B
_
N
C
D
P
= 25°C unless otherwise specified
A
KBP
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
01G
KBP
02G
-65 to +150 °C
A 14.25 14.75
B 10.20 10.60
C 2.29 Typical
D 14.25 14.73
E 3.56 4.06
G 0.76 0.86
H 1.17 1.42
KBP
06G
2.8 X 45°
Chamfer
KBP
KBP
08G
10G
KBP005G-KBP10G
© Diodes Incorporated
Unit
J
K 0.80 1.10
L 3.35 3.65
M 3° Nominal
N 2° Nominal
P 0.30 0.64
All Dimensions in mm
KBP
04G
1.5 A
40 A
1.1 V
5.0
500
20 pF
18 °C/W
µA
RAGE REC
T
F
C
U
R
R
N
T
TANT
O
US FORWAR
C
URRENT
P
O
RWAR
URGE CUR
RENT
C, CAPACITAN
C
F
T
T
O
US R
R
C
U
R
RENT
2.0
10
(A)
(A)
1.5
E
1.0
D
IED
1.0
I
T = 25°C
j
0.1
0.5
O
I, AVE
0
050100
150
T , TE MPERATURE (°C)
Fig. 1 Forward Current Derating Curve
50
T = 150°C
(A)
j
Single half
sine wave
ANE
F
I, INS
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V , INSTANTANEOUS F O RWARD VO LTAGE ( V)
F
Fig. 2 Typical Forward Charac teristics
100
T= 25°C
J
f = 1MHz
40
)
30
D S
20
10
EAK F
FSM
I,
0
110
NUMBER OF CYCLES AT 6 0 Hz
Fig. 3 Max Non-Repetitive P eak Forw ar d Surge Curr ent
1,000
μ
(A)
100
T = 125ºC
j
SE
10
EVE
1.0
T = 25ºC
ANE
AN
0.1
j
E (p
10
T
1
100
110100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Total Capacitance
R
0.01
I, INS
0
20
40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21203 Rev. 12 - 2
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KBP005G-KBP10G
© Diodes Incorporated
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