Diodes IMX8 User Manual

Features

• Epitaxial Planar Die Construction

• Complementar

y PNP Type Available (IMT4)

• Small Surface Mount Package

• Lead

• "Gree

Free/RoHS Compliant (Note 3)

n" Device, Note 4 and 5

Mechanical Data

• Case: SOT-26

• Case Material:

Compound, Note 5. UL Flammability Classification
Rating 94V-0

• Moisture Sensitivity

• Terminal Conn

• Terminals: Solderable per MI

• Lead Fr

Copper leadframe).

• Marking Informat

• Orde

ring & Date Code Information: See Page 3

• Weight: 0.016 gr

Molded Plastic, "Green" Molding

ections: See Diagram

ee Plating (Matte Tin Finish annealed over

ion: KX8, See Page 3

ams (approximate)

: Level 1 per J-STD-020C

L-STD-202, Method 208

IMX8

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

1

C

B

1

M

Dim Min Max Typ

SOT-26

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
F

⎯ ⎯
⎯ ⎯

0.95

0.55

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10

L

F

1

1

L 0.35 0.55 0.40
M 0.10 0.20 0.15

0° 8°

α

All Dimens ons in mm i

⎯

B2B1E

C2E2C

K

J

B2B1E

C2E2C

A

H

D

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

V
V
V

R

Tj, T

CBO
CEO
EBO

I

C

P

θ

d
JA
STG

120 V
120 V

5.0 V
50 mA

300 mW
417

-55 to +150

°C/W

°C

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

ON CHARACTERISTICS (Note 2)

DC Current Gain
Collector-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

= 25°C unless otherwise specified

A

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

V

CE(SAT)

FE

f

T

120
120

5.0

⎯ ⎯
⎯ ⎯

180

⎯ ⎯

⎯

140

⎯ ⎯
⎯ ⎯
⎯ ⎯

0.5

0.5

⎯

820

0.5 V

⎯

V

IC = 50μA

V

IC = 1.0mA

V

IE = 50μA

μA

VCB = 100V

μA

V

= 4.0V

EB

⎯ IC = 2.0mA, VCE = 6.0V

IC = 10mA, IB = 1.0mA

VCE = 12V, IC = 2.0mA,

MHz

f = 100MHz

DS30304 Rev. 8 - 2 1 of 3

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.diodes.com

IMX8

© Diodes Incorporated

P, P

O

R

PATIO

C

CUR

REN

T GAIN

C

O

CTO

R CUR

RENT

RTT C

O

CTO

R T

O

G

T

H P

R

ODU

C

T

H

C

O

CTO

R C

U

R

R

T

350

300

500

T = 75C

°

A

N (mW)

600

250

400

T = 25C

°

A

200

DISSI

150

WE

100

D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

175

200

Fig. 1, Max Power Dissipation vs.

100

Ambient Temperatur e

T = 25C

A

°

(mA)

10.0

T= 75C

°

A

300

T = -25C

°

A

200

FE

h, D

100

0

1.0
I COLLECTOR CURRENT (mA)

C,

10.0

Fig. 2 Typical DC Current Gain vs. Collector Current

1.0

E

T = 150C

°

EMI

A

100

0.100

T = 25C

°

T = -25C

°

LLE

1.0

C

I,

0.1
00

0.2

V , BASE-EMITTER VOLTAGE (V)

BE(ON)

0.3

0.4 0.5

A

.9

0.80.70.60.1

Fig. 3 Typical Collector Current vs.

Base-E m itter Voltage

1,000

V = 5 Volts

CE

z)
(M

100

10

AIN BANDWID

T

f,

1

1

I , COLLECTOR CURRENT (mA)

C

10 100

Fig. 5 Typical Gain Bandwidth Product

vs. Collector Current

LLE

SATURATION VOLT AGE (V)

CE(SAT)

V,

0.010

(mA)
EN

LLE

C

I,

T = -50C

A

1

10 100 1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Voltage

vs. Collect or Current

6

I = 16µA

B

5

4

3

2

1

0

0.5 1.51

0

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I = 1µAB4

2

I = 1µA

B

I = 1µA

0

B

I = µA

8

B

6

I = µA

B

4

I = µA

B

2.5 3.53445

2

Fig. 6 Typical Collector Current vs.

Collector-Emitter Voltage

DS30304 Rev. 8 - 2 2 of 3

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A

°

.5

IMX8

© Diodes Incorporated