Diodes IMX8 User Manual

Features

• Epitaxial Planar Die Construction

• Complementar

y PNP Type Available (IMT4)

• Small Surface Mount Package

• Lead

• "Gree

Free/RoHS Compliant (Note 3)

n" Device, Note 4 and 5

Mechanical Data

• Case: SOT-26

• Case Material:

Compound, Note 5. UL Flammability Classification
Rating 94V-0

• Moisture Sensitivity

• Terminal Conn

• Terminals: Solderable per MI

• Lead Fr

Copper leadframe).

• Marking Informat

• Orde

ring & Date Code Information: See Page 3

• Weight: 0.016 gr

Molded Plastic, "Green" Molding

ections: See Diagram

ee Plating (Matte Tin Finish annealed over

ion: KX8, See Page 3

ams (approximate)

: Level 1 per J-STD-020C

L-STD-202, Method 208

IMX8

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

1

C

B

1

M

Dim Min Max Typ

SOT-26

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
F

⎯ ⎯
⎯ ⎯

0.95

0.55

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10

L

F

1

1

L 0.35 0.55 0.40
M 0.10 0.20 0.15

0° 8°

α

All Dimens ons in mm i

⎯

B2B1E

C2E2C

K

J

B2B1E

C2E2C

A

H

D

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

V
V
V

R

Tj, T

CBO
CEO
EBO

I

C

P

θ

d
JA
STG

120 V
120 V

5.0 V
50 mA

300 mW
417

-55 to +150

°C/W

°C

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

ON CHARACTERISTICS (Note 2)

DC Current Gain
Collector-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

= 25°C unless otherwise specified

A

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

V

CE(SAT)

FE

f

T

120
120

5.0

⎯ ⎯
⎯ ⎯

180

⎯ ⎯

⎯

140

⎯ ⎯
⎯ ⎯
⎯ ⎯

0.5

0.5

⎯

820

0.5 V

⎯

V

IC = 50μA

V

IC = 1.0mA

V

IE = 50μA

μA

VCB = 100V

μA

V

= 4.0V

EB

⎯ IC = 2.0mA, VCE = 6.0V

IC = 10mA, IB = 1.0mA

VCE = 12V, IC = 2.0mA,

MHz

f = 100MHz

DS30304 Rev. 8 - 2 1 of 3

www

.diodes.com

IMX8

© Diodes Incorporated

P, P

O

R

PATIO

C

CUR

REN

T GAIN

C

O

CTO

R CUR

RENT

RTT C

O

CTO

R T

O

G

T

H P

R

ODU

C

T

H

C

O

CTO

R C

U

R

R

T

350

300

500

T = 75C

°

A

N (mW)

600

250

400

T = 25C

°

A

200

DISSI

150

WE

100

D

50

0

0

25 50

T , AMBIENT TEMPERATURE (°C)

A

75

100 125

150

175

200

Fig. 1, Max Power Dissipation vs.

100

Ambient Temperatur e

T = 25C

A

°

(mA)

10.0

T= 75C

°

A

300

T = -25C

°

A

200

FE

h, D

100

0

1.0
I COLLECTOR CURRENT (mA)

C,

10.0

Fig. 2 Typical DC Current Gain vs. Collector Current

1.0

E

T = 150C

°

EMI

A

100

0.100

T = 25C

°

T = -25C

°

LLE

1.0

C

I,

0.1
00

0.2

V , BASE-EMITTER VOLTAGE (V)

BE(ON)

0.3

0.4 0.5

A

.9

0.80.70.60.1

Fig. 3 Typical Collector Current vs.

Base-E m itter Voltage

1,000

V = 5 Volts

CE

z)
(M

100

10

AIN BANDWID

T

f,

1

1

I , COLLECTOR CURRENT (mA)

C

10 100

Fig. 5 Typical Gain Bandwidth Product

vs. Collector Current

LLE

SATURATION VOLT AGE (V)

CE(SAT)

V,

0.010

(mA)
EN

LLE

C

I,

T = -50C

A

1

10 100 1,000

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Voltage

vs. Collect or Current

6

I = 16µA

B

5

4

3

2

1

0

0.5 1.51

0

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I = 1µAB4

2

I = 1µA

B

I = 1µA

0

B

I = µA

8

B

6

I = µA

B

4

I = µA

B

2.5 3.53445

2

Fig. 6 Typical Collector Current vs.

Collector-Emitter Voltage

DS30304 Rev. 8 - 2 2 of 3

www.diodes.com

A

°

.5

IMX8

© Diodes Incorporated

Ordering Information (Note 5 & 6 )

Device Packaging Shipping

IMX8-7-F SOT-26 3000/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012

Code N P R S T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

KX8

IMPORTANT NOTICE

LIFE SUPPORT

KX8 = Product Type Marking Code
YM = Date Code Marking

M

Y =Year ex: T = 2006

Y

M = Month ex: 9 = September

DS30304 Rev. 8 - 2 3 of 3

www.diodes.com

IMX8

© Diodes Incorporated