Diodes IMT17 User Manual
(BR)
(BR)
(BR)
)
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Features
• Epitaxial Planar Die Construction
• Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Maximum Ratings @T
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
= 25°C unless otherwise specified
A
Top View
IMT17
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.016 grams (approximate)
C1
E1B2B1
Device Schematic
V
CBO
V
CEO
V
EBO
I
C
E2
C2
-60 V
-50 V
-5.0 V
-500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @TA = 25°C PD
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage (Note 3)
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
Output Capacitance
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index .php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 4 or on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
IMT17
Document number: DS31202 Rev. 4 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
A
T
J
= 25°C unless otherwise specified
V
V
V
I
I
V
CE(SAT
C
CBO
EBO
h
FE
f
T
ob
CBO
CEO
EBO
-60 — — V
-50 — — V
-5.0 — — V
— — -0.1
— — -0.1
120 — 390 —
— — -0.6 V
— 200 — MHz
— 7 — pF
1 of 4
www.diodes.com
R
, T
300 mW
JA
θ
STG
417
-55 to +150
°C /W
°C
IC = -100μA
IC = -1.0mA
IE = -100μA
μA
μA
V
CB
V
EB
= -30V
= -4.0V
VCE = -3.0V, IC = -100mA
IC = -500mA, IB = -50mA
V
= -5V, IE = 20mA,
CE
f = 100MHz
VCB = -10V, IE = 0, f = 1MHz
March 2009
© Diodes Incorporated
P, P
OWER
PATIO
N
C CUR
REN
T GAIN
C
O
CTO
R
T
TER
T
T
R
TURN-O
OLT
G
T
T
R
TUR
TIO
OLT
G
IMT17
400
350
(mW)
DISSI
300
250
200
150
100
D
50
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
A
75
100 125
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
150
175
200
012345
-V , COLLECTOR EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emit t er Volt age
I = -10mA
B
I = -8mA
B
I = -6mA
B
I = -4mA
B
I = -2mA
B
1
V = -3V
T = 150°C
A
CE
I/I = 10
CB
T = 85°C
A
T = 25°C
A
FE
h, D
T = -55°C
A
0.001 0.01 0.1 1
-I , COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain vs. Collector Current
C
1.2
E (V)
A
N V
0.8
0.6
E
0.4
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -3V
CE
0.2
EMI
0.1
LLE
SATURATION VOLTAGE (V)
CE(SAT)
-V ,
T = 150°C
A
T = 85°C
A
T = 25°C
T = -55°C
A
A
0.01
0.001 0.01 0.1 1
-I , COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
C
vs. Collector Current
1.2
E (V)
A
N V
0.8
A
0.6
1
T = -55°C
A
T = 25°C
A
I/I = 10
CB
SA
0.4
T = 85°C
A
T = 150°C
A
E
0.2
BE(ON)
0
-V , BASE-EMI
0.001 0.01 0.1 1
-I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.001 0.01 0.1 1
BE(SAT)
-V , BASE-EMI
-I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
IMT17
Document number: DS31202 Rev. 4 - 2
2 of 4
www.diodes.com
March 2009
© Diodes Incorporated
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