Diodes HTMN5130SSD User Manual

2

G

HTMN5130SSD

55V DUAL N-CHANNEL 175°C MOSFET

Product Summary

I

V

R

(BR)DSS

55V

130m @ V

200m @ VGS = 4.5V

DS(on) max

GS

= 10V

D

TA = +25°C

2.86 A

2.3 A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power Management Functions

ADVANCE INFORMATION

 Backlighting

Top View Top View

G1

S2

G2

Pin Configuration

Features and Benefits

 Low Input Capacitance

 Low On-Resistance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D1S1

D1

e3

D

D1

D2

1

G2

D2

S1

Equivalent Circuit

S2

Ordering Information (Note 4)

Part Number Case Packaging

HTMN5130SSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

V

V

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, duty cycle = 1%)

Continuous Source Current (Body Diode) (Note 6)

Pulsed Source Current (Body Diode)

Avalanche Current (Note 5) L =4.9mH

Avalanche Energy (Note 5) L = 4.9mH

Steady

State

t<10s

T

= +25°C ID

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

DM

I

S

I

SM

I

AS

E

AS

HTMN5130SSD

alue Units

55 V

±20 V

2.6 A

2.86

2.3

8 A

2.8 A

8 A

6 A

89 mJ

A

Thermal Characteristics (@T

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

= +25°C

T

A

= +70°C

T

A

Steady state

t<10s 50

P

R

R

T

J, TSTG

JA

JC

D

alue Units

1.7

1.1

W

72

°C/W

11.2

-55 to +175 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

55

BV

DSS

I

 

DSS

I

 

GSS

 

100 nA

100

V

VGS = 0V, ID = 250µA

VDS = 55V, VGS = 0V

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

1

 

 



 

3 V

130

200

1.0 V

VDS = VGS, ID = 250µA

V

m

VGS = 4.5V, ID = 1.5A

VGS = 0V, IS = 1.5A

= 10V, ID = 3 A

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (VGS = 10V) Qg

Total Gate Charge (VGS = 4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C



iss

C

oss

C

rss

R



G

Q



gs

Q

gd

t



D(on)

t



r

t

D(off)

t



f

t



rr

Q

rr















218.7

97.8

22.4

3.75

8.9

4.7

1.0

2.9

3

2.5

13.5

6.1

30.8

35.4





























= 25V, VGS = 0V

V

pF



nC

nS

nS

nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= 40V, ID = 2A

V

DS

V

= 10V, VDD = 25V, RG = 6,

GS

= 1A

I

D

IF = 1.5A, dI/dt = 100A/s

= 1.5A, dI/dt = 100A/s

I

F

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

2 of 6

www.diodes.com

November 2013

© Diodes Incorporated

RAIN

C

URREN

T

R

CUR

R

T

O

O

R

R

OUR

ON-R

R

R

OUR

C

R

R

N-SO

U

R

C

O

N

R

T

N

C

HTMN5130SSD

10.0

8.0

(A)

6.0

V = 10VGS

V= 4.5V

GS

V= 3.5V

GS

V= 4.0V

GS

10

(A)

EN

V = 5.0VDS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 175°C

A

AIN

D

I, D

I, D

4.0

V= 3.0V

D

GS

2.0

V= 2.5V

GS

0.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

ADVANCE INFORMATION



0.30

0.25

0123456

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0.3



0.25

V = 10VGS

T = 175°C

A

T = 150°C

T = 125°C

A

T = 25°C

A

A

T = 85°C

A

T = -55°C

A

0.20

V = 4.5VGS

N-RESISTANCE ( )

0.15

URCE

V= 10V

GS

0.10

0.05

DS(ON)

R , DRAIN-S

0.00
0246810

I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2.2

ESISTANCE ( )

0.2

0.15

CE

0.1

AIN-S

, D

0.05

DS(ON)

0

0246810

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.4



2

1.8

E

1.6

V=V

10

GS

I= 5A

D

1.4

AIN-S

, D

1.2

1

DS(ON)

V = 4.5V

GS

I= 2A

D

0.8

ON-RESISTANCE (NORMALIZED)

0.6

0.4

-50 -25 0 25 50 75 100 125 150 175

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

T , JUNCTION TEMPERATURE ( C)

J



Figure 5 On-Resistance Variation with Temperature

www.diodes.com

3 of 6

E ( )

0.35

A

ESIS

-

E

0.3

0.25

0.2

V = 4.5V

GS

I= 5A

D

0.15

V=V

10

GS

I= 10A

AI

0.1

D

, D

0.05

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation wit h Temperature



November 2013

© Diodes Incorporated

GATE THRESH

OLD VOLTAG

OUR

CE CUR

R

N

C

UNCTION CAPAC

C

GATE THRESH

O

OLTAG

HTMN5130SSD

3

10

2.9

E (V)

2.8

2.7

I= 1mA

2.6

2.5

I = 250µA

D

D

2.4

8

T (A)
E

6

T= 25°C

A

4

2.3

S

2.2

GS(th)

2.1

V,

2

-50 -25 0 25 50 75 100 125 150 175

Figure 7 Gate Threshold Variation vs. Ambient Temperature

ADVANCE INFORMATION

1000

E (pF)

T , JUNCTION TEMPERATURE ( C)

J

C



iss

I, S

2

0

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

10

V= 40V

DS

I=A

2

D

8

E (V)

ITAN

100

C

oss

6

LD V

4

, J

T

f = 1MHz

10

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

rss

Figure 9 Typical Junction Capacitance

2

GS

V

0

0246810

Q(nC)

, TOTAL GATE CHARGE

g

Figure 10 Gate Charge

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

4 of 6

www.diodes.com

November 2013

© Diodes Incorporated

HTMN5130SSD

Test Circuits

ADVANCE INFORMATION

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

E1

E

A1

Detail ‘A’

L

0.254
Gauge Plane

Seating Plane

7°~9

°

Detail ‘A’

A3

h

°

45

A2

e

b

D

A

Dim Min Max

SO-8

A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10

E1 3.85 3.95

e 1.27 Typ
h - 0.35
L 0.62 0.82

0 8



All Dimensions in mm

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

5 of 6

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November 2013

© Diodes Incorporated

HTMN5130SSD

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

ADVANCE INFORMATION

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

X

Dimensions Value (in mm)

X 0.60
Y 1.55

C1

C2

Y

IMPORTANT NOTICE

LIFE SUPPORT

C1 5.4
C2 1.27

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

6 of 6

www.diodes.com

November 2013

© Diodes Incorporated