Diodes HTMN5130SSD User Manual

2

G

HTMN5130SSD

55V DUAL N-CHANNEL 175°C MOSFET

Product Summary

I

V

R

(BR)DSS

55V

130m @ V

200m @ VGS = 4.5V

DS(on) max

GS

= 10V

D

TA = +25°C

2.86 A

2.3 A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power Management Functions

ADVANCE INFORMATION

 Backlighting

Top View Top View

G1

S2

G2

Pin Configuration

Features and Benefits

 Low Input Capacitance

 Low On-Resistance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D1S1

D1

e3

D

D1

D2

1

G2

D2

S1

Equivalent Circuit

S2

Ordering Information (Note 4)

Part Number Case Packaging

HTMN5130SSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

V

V

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, duty cycle = 1%)

Continuous Source Current (Body Diode) (Note 6)

Pulsed Source Current (Body Diode)

Avalanche Current (Note 5) L =4.9mH

Avalanche Energy (Note 5) L = 4.9mH

Steady

State

t<10s

T

= +25°C ID

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

DM

I

S

I

SM

I

AS

E

AS

HTMN5130SSD

alue Units

55 V

±20 V

2.6 A

2.86

2.3

8 A

2.8 A

8 A

6 A

89 mJ

A

Thermal Characteristics (@T

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

= +25°C

T

A

= +70°C

T

A

Steady state

t<10s 50

P

R

R

T

J, TSTG

JA

JC

D

alue Units

1.7

1.1

W

72

°C/W

11.2

-55 to +175 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

55

BV

DSS

I

 

DSS

I

 

GSS

 

100 nA

100

V

VGS = 0V, ID = 250µA

VDS = 55V, VGS = 0V

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

1

 

 



 

3 V

130

200

1.0 V

VDS = VGS, ID = 250µA

V

m

VGS = 4.5V, ID = 1.5A

VGS = 0V, IS = 1.5A

= 10V, ID = 3 A

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge (VGS = 10V) Qg

Total Gate Charge (VGS = 4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C



iss

C

oss

C

rss

R



G

Q



gs

Q

gd

t



D(on)

t



r

t

D(off)

t



f

t



rr

Q

rr















218.7

97.8

22.4

3.75

8.9

4.7

1.0

2.9

3

2.5

13.5

6.1

30.8

35.4





























= 25V, VGS = 0V

V

pF



nC

nS

nS

nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= 40V, ID = 2A

V

DS

V

= 10V, VDD = 25V, RG = 6,

GS

= 1A

I

D

IF = 1.5A, dI/dt = 100A/s

= 1.5A, dI/dt = 100A/s

I

F

HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

2 of 6

www.diodes.com

November 2013

© Diodes Incorporated