Diodes HBDM60V600W User Manual
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Features
• Epitaxial Planar Die Construction
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Sub-Component P/N Reference Device Type
MMBT2907A_DIE Q1 PNP Transistor
MMBTA06_DIE Q2 NPN Transistor
Top View
Maximum Ratings: Total Device @T
Characteristic Symbol Value Unit
Operating and Storage Junction Temperature Range
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Schematic & Pin Configuration
• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.016 grams (approximate)
CQ1
MMBT2907A
BQ1
= 25°C unless otherwise specified
A
V
EBO
EQ1
Q1
MMBTA06
BQ2
Device Schematic
HBDM60V600
EQ2
Q2
CQ2
-55 to +150 °C
Thermal Characteristics: Total Device
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3)
Maximum Ratings: Sub-Component Devices @T
Characteristic Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 3)
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
PD
R
JA
θ
= 25°C unless otherwise specified
A
Q1-PNP Transistor
V
CBO
V
CEO
V
EBO
IC
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200 mW
625 °C/W
Q2-NPN Transistor
(MMBT2907A)
-60 80 V
-60 65 V
-5.5 6 V
-600 500 mA
(MMBTA06)
© Diodes Incorporated
Unit
July 2008
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Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1) @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Characteristic Symbol Min Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
⎯
BL
hFE
V
CE(SAT)
V
BE(SAT)
fT
t
⎯
on
t
⎯
d
t
⎯
r
t
⎯
off
t
⎯
s
t
⎯
r
-60
-60
-5.5
⎯
⎯
100
100
100
100
50
⎯
⎯
100
⎯
⎯
⎯
-10 nA
-50 nA
-50 nA
⎯
⎯
⎯
300
⎯
-0.3
-0.5
-0.95
-1.3
MHz
⎯
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
HBDM60V600
= 25°C unless otherwise specified
A
V
IC = -10μA, IE = 0
V
IC = -10mA, IB = 0
V
IE = -10μA, IC = 0
VCB = -50V, IE = 0
V
= -30V, V
CE
V
= -30V, V
CE
IC = -100μA, VCE = -10V
⎯
IC = -1.0mA, VCE = -10V
⎯
⎯
IC = -10mA, VCE = -10V
⎯
IC = -150mA, VCE = -10V
⎯
IC = -500mA, V
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
IC = -150mA, IB = -15mA
V
IC = -500mA, IB = -50mA
VCE = -2.0V, IC = -10mA,
f = 100MHz
= -30V, IC = -150mA,
V
CE
I
= -15mA
B1
= -6.0V, IC = -150mA,
V
CC
= I
= -15mA
I
B1
B2
EB(OFF)
EB(OFF)
= -10V
CE
= -0.5V
= -0.5V
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2) @T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Notes: 4. Short duration pulse test used to minimize self-heating effect.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
⎯ ⎯
CBO
I
⎯ ⎯
CES
I
⎯ ⎯
EBO
h
FE
V
CE(SAT)
V
BE(ON)
V
BE(SAT)
fT
80
65
6
250
100
⎯
0.7 0.75 0.8 V
⎯ ⎯
100
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯ ⎯ V
⎯ ⎯ ⎯ V
0.2 0.4 V
0.95 V
⎯ ⎯
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= 25°C unless otherwise specified
A
V
IC = 100μA, IE = 0
V
IC = 1mA, IB = 0
V
IE = 100μA, IC = 0
100 nA
100 nA
100 nA
VCB = 80V, IE = 0
V
= 90V, VBE = 0
CE
VEB = 5V, IC = 0
= 1V, IC = 10mA
CE
= 1V, IC = 100mA
CE
IC = 100mA, IB = 10mA
VCE = 1V, IC = 100mA
IC = 100mA, IB = 5mA
VCE = 20V, IC = 10mA,
MHz
f = 100MHz
July 2008
© Diodes Incorporated
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P, P
OWER
PATIO
N
C, CAPACITANC
F
C
O
CTO
R
T
TER VOLTAG
C
O
C
T
O
R T
O
T
T
R
C CUR
R
T
G
Typical Characteristics @T
= 25°C unless otherwise specified
A
200
150
(mW)
100
DISSI
50
D
0
0
25 50
T , AMBIENT TEMPERATURE (°C)
75 100 125
A
150
175
200
Fig. 1 Power Derating Curve
PNP (MMBT2907A) Transistor (Q1) Plots:
30
HBDM60V600
1.6
1
T = -50°C
I = 300mA
C
10 100
A
1.4
20
10
)
Cibo
E (p
5.0
Cobo
1.0
0.1
1.0 30
10
E (V)
1.2
1.0
0.8
-EMI
0.6
LLE
0.4
CE
0.2
-V ,
0
0.001 0.01
I = 1mA
C
REVERSE VOLTAGE (V)
Fig. 2 Typical Capacitance
0.6
I
C
= 10
I
0.5
0.4
0.3
B
T = 150°C
A
E
EMI
1,000
V = 5V
CE
AIN
100
EN
I = 10mA
C
I = 100mA
C
I = 30mA
C
0.1
-I , BASE CURRENT (mA)
B
Fig. 3 Typical Collector Saturation Region
T = 150°C
A
T = 25°C
A
LLE
0.2
SATURATION VOLTAGE (V)
CE(SAT)
0.1
-V ,
T = 25°C
A
T = -50°C
A
FE
h, D
10
0
110
-I , COLLECTOR CURRENT (mA)
C
100
Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
1,000
3 of 7
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1
110
-I , COLLECTOR CURRENT (mA)
C
100
Fig. 5 Typical DC Current Gain vs. Collector Current
© Diodes Incorporated
1,000
July 2008
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