Pb
GBU10005 - GBU1010
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
• Glass Passivated Die Construction
• High Case Dielectric Strength of 1500V
• Low Reverse Leakage Current
• Surge Overload Rating to 220A Peak
• Ideal for Printed Circuit Board Applications
• UL Listed Under Recognized Component
Index, File Number E94661
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
RMS
Mechanical Data
• Case: GBU
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish. Solderable per MIL-STD 202, Method
• Polarity: Marked on Body
• Mounting: Through Hole for #6 Screw
• Mounting Torque: 5.0 Inch-pounds Maximum
• Marking: Date Code and Type Number
• Weight: 4 grams (approximate)
208
Ordering Information (Note 3)
Part Number Case Packaging
GBU10005-GBU1010 GBU 20/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. For packaging details, go to our website at http://www.diodes.com.
Maximum Ratings and Electrical Characteristics (@T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Current (Note 4) @ TC = +100°C I
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage (per element) @ IF = 5.0A VFM
@ T
@ T
= +25°C
C
= +125°C
C
Peak Reverse Current at
Rated DC Blocking Voltage
I2t Rating for Fusing (Note 5) I2t
Typical Total Capacitance per Element (Note 6)
Typical Thermal Resistance Junction to Case (Note 4)
Operating and Storage Temperature Range
Notes: 4. Unit mounted on 100mm x 100mm x 1.6mm copper plate heatsink.
5. Non-repetitive, for t > 1.0ms and < 8.3ms.
6. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
GBU10005 - GBU1010
Document number: DS30052 Rev. 6 - 2
V
RRM
V
RWM
V
R
V
R(RMS
I
FSM
I
R
C
T
R
JC
T
J, TSTG
1 of 4
www.diodes.com
= +25°C, unless otherwise specified.)
A
GBU
10005
GBU
1001
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
GBU
1002
GBU
1004
-55 to +150
GBU
1006
10 A
220 A
1.0 V
5.0
500
200
60 pF
2.2
GBU
1008
November 2012
© Diodes Incorporated
GBU
1010
Unit
μA
A2s
°C/W
°C
GBU10005 - GBU1010
10
(A)
Resistive or
Inductive Load
100
(A)
8
T = 25C
°
D
IED
6
10
J
4
WA
1.0
2
(AV)
I, AV
0
050100150
T , CASE TEMPERATURE ( C)
C
°
Figure 1 Forward Current Derating Curve
250
(A)
200
Single half-sine wave
F
I, I
0.1
0.20 0.6 1.0 1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
1.4
Figure 2 Typical Forward Characteristics, per element
1,000
T = 25C
)
f = 1.0MHz
E (p
°
J
150
D S
100
100
AL
50
EAK
T = 25C
°
FSM
I,
J
0
110100
NUMBER OF CYCLES AT 60Hz
Figure 3 Maximum Non-Repetitive Surge Current
T
10
0.1 1.0 10 100
V , REVERSE VOLTAGE (V)
R
Figure 4 Typical Total Capacitance, per element
GBU10005 - GBU1010
Document number: DS30052 Rev. 6 - 2
2 of 4
www.diodes.com
November 2012
© Diodes Incorporated