Diodes GBJ8005, GBJ810 User Manual

Features
Glass Passivated Die Construction
·
High Case Dielectric Strength of 1500V
·
Low Reverse Leakage Current
·
Surge Overload Rating to 170A Peak
·
Ideal for Printed Circuit Board Applications
·
UL Listed Under Recognized Component Index, File Number
·
E94661
Lead Free Finish/RoHS Compliant (Note 4)
·
RMS
Mechanical Data
Case: GBJ
·
Case Material: Molded Plastic. UL Flammability
·
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Plated Leads, Solderable per MIL-STD-202,
·
Method 208
Lead Free Plating (Tin Finish).
·
Polarity: Molded on Body
·
Mounting: Through Hole for #6 Screw
·
Mounting Torque: 5.0 in-lbs Maximum
·
· Marking: Type Number
·
Weight: 6.6 grams (approximate)
e
3
GBJ8005 - GBJ810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Dim Min Max
29.70 30.30
A
19.70 20.30
B
17.00 18.00
L
K
A
B
_
J
H
I
EEG
D
C
M
S
N
P
R
C
3.80 4.20
D
7.30 7.70
E
9.80 10.20
G
2.00 2.40
H
0.90 1.10
I
2.30 2.70
J
K
L
M
N
P
R
S
All Dimensions in mm
3.0 X 45°
4.40 4.80
3.40 3.80
3.10 3.40
2.50 2.90
0.60 0.80
10.80 11.20
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current @ TC= 110°C
Non-Repetitive Peak Forward Surge Current, 8.3ms single half-sine-wave superimposed on rated load
Forward Voltage per element @ IF= 4.0A
Peak Reverse Current @ TC= 25°C at Rated DC Blocking Voltage @ T
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Total Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
= 125°C
C
V V
V
V
R(RMS)
I
FSM
V
C
R
T
j,TSTG
8005
RRM RWM
R
I
O
FM
I
R
2
I
t 120 A2s
T
qJC
@ TA= 25°C unless otherwise specified
801
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
802
EU Directive Annex Notes 5 and 7.
804
170 A
500
-65 to +150 °C
806
8.0 A
1.0 V
5.0
55 pF
1.6 °C/W
808
810
Unit
mA
DS21217 Rev. 7 - 2 1 of 3 GBJ8005-GBJ810
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ã Diodes Incorporated
10
g
)
180
g
100
g
)
1000
g
10
I , AVERAGE RECTIFIED CURRENT (A)
g
O
160
120
8
6
4
2
0
Resistive or
Inductive load
25
With heatsink
Without heatsink
50
T , CASE TEMPERATURE ( C)
. 1 Forward Current DeratingCurve
Fi
75
C
100
Single half-sine-wave
125 150
°
T = 150 Cj°
F
I , INSTANTANEOUS FORWARD CURRENT (A)
1.0
0.1
T=25Cj°
0.01 0 0.4 0.8 1.2 1.6 1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fi
.2 Typical Forward Characteristics(per element
T=25C
°
j
f = 1MHz
FSM
I , PEAK FORWARD SURGE CURRENT (A)
80
40
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fi
. 3 Maximum Non-Repetitive Surge Current
100
10
1.0
T = 125 Cj°
T = 100 Cj°
T=50Cj°
100
10
T
C , TOTAL CAPACITANCE (pF)
1
1 10 100
V , REVERSE VOLTAGE (V)
R
.4 Typical Total Capacitance(per element
Fi
T=25Cj°
0.1 20 40 60
0
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
.5 Typical Reverse Characteristics
DS21217 Rev. 7 - 2 2 of 3 GBJ8005-GBJ810
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