Diodes GBJ25005, GBJ2510 User Manual
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Features
• Glass Passivated Die Construction
• High Case Dielectric Strength of 2500V
• Low Reverse Leakage Current
• Surge Overload Rating to 350A Peak
• Ideal for Printed Circuit Board Applications
• UL Listed Under Recognized Component
Index, File Number E94661
• Lead Free Finish/RoHS Compliant (Note 4)
Maximum Ratings @T
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
(Note 1) @ TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
Single Half Sine-Wave Superimposed on rated Load
= 25°C unless otherwise specified
A
RMS
GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Mechanical Data
• Case: GBJ
• Case Material: Molded Plastic. UL Flammability Classification
94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Plated Leads, Solderable per MIL-STD-202, Method
208
• Lead Free Plating (Tin Finish).
• Polarity: Molded on Body
• Mounting: Through Hole for #6 Screw
• Mounting Torque: 5.0 in-lbs Maximum
• Marking: Type Number
• Weight: 6.6 grams (approximate)
V
V
V
R(RMS
I
RRM
RWM
VR
IO
FSM
GBJ
25005
GBJ
2501
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
GBJ
2502
GBJ
2504
GBJ
2506
25 A
350 A
GBJ
2508
GBJ
2510
Unit
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Electrical Characteristics @T
Characteristic Symbol Value Unit
Forward Voltage (per element) @ IF = 12.5A VFM
Peak Reverse Current @ TC = 25°C
at Rated DC Blocking Voltage @ TC = 125°C
I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 510 A2s
Typical Total Capacitance (per element) (Note 2)
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
GBJ25005 - GBJ2510
Document number: DS21221 Rev. 8 - 2
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
4. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/products/lead_free.html.
A
R
T
J, TSTG
= 25°C unless otherwise specified
IR
CT
1 of 4
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JC
0.6 °C/W
-65 to +150 °C
1.05 V
10
500
85 pF
µA
October 2009
© Diodes Incorporated
RAGE REC
TIF
CUR
REN
T
TANT
O
US FORWARD C
U
R
RENT
P
FORWAR
URGE CUR
RENT
C, TOT
CAPACITANC
F
GBJ25005 - GBJ2510
30
25
with heatsink
(A)
100
(A)
T = 25°C
j
10
20
IED
15
1.0
10
ANE
0.1
F
I , INS
0.01
00.8
0.4
V , INSTANTANEOUS FORWARD VOL TAGE (V)
F
Fig. 2 Typi cal Forward C haracter istics (per element)
1.2
1.6
2.0
I, AVE
without heatsink
5
O
0
Resistive or
Inductive load
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
C
Fig. 1 Forward Current Derating Curve
1,000
400
(A)
Single half-sine-wave
T = 25°C
j
)
300
D S
200
100
EAK
FSM
I,
1,000
100
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
100
E (p
100
AL
10
T
1
1.0
V , REVERSE VOLTAGE (V)
R
10 100
Fig. 4 Typical Total Capacitance, Per Element
1.0
0.1
020406080
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
GBJ25005 - GBJ2510
Document number: DS21221 Rev. 8 - 2
2 of 4
www.diodes.com
October 2009
© Diodes Incorporated
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