Diodes GBJ20005, GBJ2010 User Manual

Features
Glass Passivated Die Construction
·
High Case Dielectric Strength of 1500V
·
Low Reverse Leakage Current
·
Surge Overload Rating to 240A Peak
·
Ideal for Printed Circuit Board Applications
·
UL Listed Under Recognized Component
·
Index, File Number E94661
Lead Free Finish/RoHS Compliant (Note 4)
·
RMS
Mechanical Data
Case: GBJ
·
Case Material: Molded Plastic. UL Flammability
·
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Plated Leads, Solderable per MIL-STD-202,
·
Method 208
Lead Free Plating (Tin Finish).
·
Polarity: Molded on Body
·
Mounting: Through Hole for #6 Screw
·
Mounting Torque: 5.0 in-lbs Maximum
·
Marking: Type Number
·
·
Weight: 6.6 grams (approximate)
e
3
GBJ20005 - GBJ2010
20A GLASS PASSIVATED BRIDGE RECTIFIER
Dim Min Max
29.70 30.30
A
19.70 20.30
B
17.00 18.00
L
K
A
B
_
S
J
H
D
C
I
M
P
R
EEG
C
D
E
G
H
N
I
J
K
L
M
N
P
R
S
All Dimensions in mm
3.80 4.20
7.30 7.70
9.80 10.20
2.00 2.40
0.90 1.10
2.30 2.70
3.0 X 45°
4.40 4.80
3.40 3.80
3.10 3.40
2.50 2.90
0.60 0.80
10.80 11.20
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current @ TC= 110°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load
Forward Voltage per element @ IF= 10A
Peak Reverse Current @ TA= 25°C at Rated DC Blocking Voltage @ T
I2t Rating for Fusing (t < 8.3 ms) (Note 1)
Typical Total Capacitance per Element (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
= 125°C
C
V V
V
V
R(RMS)
I
FSM
V
C
R
T
j,TSTG
20005
RRM RWM
R
I
O
FM
I
R
2
I
t 240 A2s
T
qJC
@ TA= 25°C unless otherwise specified
2001
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
2002
EU Directive Annex Notes 5 and 7.
2004
1.05 V
-55 to +150 °C
20 A
240 A
10
500
60 pF
0.8 °C/W
2010
Unit
µA
DS21220 Rev. 8 - 2 1 of 3 GBJ20005-GBJ2010
www.diodes.com
ã Diodes Incorporated
g
)
100
g
250
100
g
1000
g
g
2
5
I , AVERAGE RECTIFIED CURRENT (A)
20
With heatsink
10
15
1.0
10
Resistive or
Inductive load
25
Without heatsink
50
T , CASE TEMPERATURE (°C)
Fi
. 1 Forward Current DeratingCurve
75
C
100
Single half-sine-wave
125 150
T=25°C
j
5
O
0
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.1
0.01
T=25°C
j
0
0.4 0.8 1.2 1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
.2 Typical Forward Characteristics(per element
Fi
T=25°C
j
f=1MHz
2.0
200
150
10
100
T
C , TOTAL CAPACITANCE (pF)
1
I , PEAK FORWARD SURGE CURRENT (A)
FSM
50
0
1
10
100
1 10 100
V , REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fi
. 3 Maximum Non-Repetitive Surge Current
T = 125°C
j
Fi
R
.4 Typical Total Capacitance, Per Element
100
T = 100°C
j
10
T=50°C
j
1.0
T=25°C
j
0.1 0
20 40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
.5 Typical Reverse Characteristics
DS21220 Rev. 8 - 2 2 of 3 GBJ20005-GBJ2010
www.diodes.com
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