Diodes GBJ10005, GBJ1010 User Manual

Features
GBJ10005 - GBJ1010
10A GLASS PASSIVATED BRIDGE RECTIFIER
Glass Passivated Die Construction
·
·
Low Reverse Leakage Current
·
Surge Overload Rating to 170A Peak
·
Ideal for Printed Circuit Board Applications
·
UL Listed Under Recognized Component Index, File Number
·
E94661
Lead Free Finish/RoHS Compliant (Note 4)
·
RMS
Mechanical Data
Case: GBJ
·
Case Material: Molded Plastic - UL Flammability
·
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
·
Terminals: Plated Leads, Solderable per MIL-STD-202,
·
Method 208
Lead Free Plating (Tin Finish).
·
Polarity: Molded on Body
·
Mounting: Through Hole for #6 Screw
·
Mounting Torque: 5.0 in-lbs Maximum
·
·
Marking: Type Number
·
Weight: 6.6 grams (approximate)
e
3
GBJ
Dim Min Max
29.70 30.30
A
19.70 20.30
B
17.00 18.00
L
K
A
B
_
J
H
I
EEG
D
C
M
S
N
P
R
C
3.80 4.20
D
7.30 7.70
E
9.80 10.20
G
2.00 2.40
H
0.90 1.10
I
2.30 2.70
J
K
L
M
N
P
R
S
All Dimensions in mm
3.0 X 45°
4.40 4.80
3.40 3.80
3.10 3.40
2.50 2.90
0.60 0.80
10.80 11.20
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load
Forward Voltage per element @ IF= 5.0A
Peak Reverse Current @TC= 25°C at Rated DC Blocking Voltage @ T
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Total Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
@ T
= 110°C
C
= 125°C
C
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
R
2
I
t 120 A2s
C
T
R
qJC
T
j,TSTG
@ TA= 25°C unless otherwise specified
GBJ
10005
GBJ
1001
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
GBJ
1002
EU Directive Annex Notes 5 and 7.
GBJ
1004
170 A
1.05 V
500
-65 to +150 °C
GBJ
1006
10 A
10
55 pF
1.4 °C/W
GBJ
1008
GBJ
1010
Unit
mA
DS21218 Rev. 7 - 2 1 of 3 GBJ10005-GBJ1010
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ã Diodes Incorporated
10
g
)
180
g
g
1000
g
10
12
g
with heatsink
O
I , AVERAGE RECTIFIED CURRENT (A)
6
160
120
80
8
4
2
0
without heatsink
Resistive or
Inductive load
25 50 75 100 125 150
T , CASE TEMPERATURE ( C)
C
. 1 Forward Current DeratingCurve
Fi
°
Single half-sine-wave
T=150CJ°
F
I , INSTANTANEOUS FORWARD CURRENT (A)
1.0
T=25CJ°
0.1
0.01 0 0.4 0.8 1.2 1.6 1.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
.2 Typical Forward Characteristics(per element
Fi
100
10
°
T=25C
j
f = 1MHz
FSM
I , PEAK FORWARD SURGE CURRENT (A)
40
T
C , TOTAL CAPACITANCE (pF)
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fi
. 3 Maximum Non-Repetitive Surge Current
T = 150 CJ°
100
T = 125 CJ°
T = 100 CJ°
1
1 10 100
V , REVERSE VOLTAGE (V)
R
.4 Typical Total Capacitance, Per Element
Fi
10
1.0
T=25CJ°
0.1 02040 6080
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
.5 Typical Reverse Characteristics
DS21218 Rev. 7 - 2 2 of 3 GBJ10005-GBJ1010
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