Diodes FZTA14 User Manual
SOT223 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 JANUARY 1996
FZTA14
PARTMARKING DETAIL:- DEVICE TYPE IN FULL
C
COMPLEMENTARY TYPE :- FZTA64
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CES
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CES
I
CBO
EBO
V
CE(sat )
V
BE(on)
V
BE(sat )
h
FE
30 V
100 nA VCB=30V, IE=0
100 nA VEB=10V, IC=0
1.5
1.6
2.0 V IC=100mA, VCE=5V*
2.0
2.2
10K
20K
V
V
V
V
5K
Transition Frequency f
T
*Measured under pulsed conditions. Pulse Width=300
170 MHz IC=50mA, VCE=5V*
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT38C datasheet.
30 V
30 V
30 V
10 V
1A
2W
-55 to +150 °C
=100µA, V
I
C
=0
BE
IC=100mA, IB=0.1mA*
=1A, IB=1mA*
I
C
IC=100mA, IB=0.1mA
=1A, IB=1mA
I
C
I
=10mA, VCE=5V*
C
I
=100mA, VCE=5V*
C
=1A, VCE=5V*
I
C
f=20MHz
E
C
3 - 301
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