Diodes FZT968 User Manual
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; R
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
CE(sat)
44mΩ at 5A
FZT968
C
PARTMARKING DETAIL FZT968
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-15 -28 V
-12 -20 V IC=-10mA*
-6 -8 V
-10
-1.0
-10 nA VEB=-6V
-130
-65
-170
-132
-450
-360
-1050 -1200 mV IC=-6A, IB=-250mA*
-870 -1050 mV IC=-6A, VCE=-1V*
450
300
300
200
150
450
300
240
1000
50
Transition Frequency f
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
T
obo
on
t
off
80 MHz IC=-100mA, VCE=-10V
161 pF VCB=-20V, f=1MHz
120
116
µs. Duty cycle ≤2%
3 - 294
-15 V
-12 V
-6 V
-20 A
-6 A
3W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
V
nA
µA
mV
mV
mV
=-12V
CB
=-12V, T
V
CB
I
=-500mA, IB=-5mA*
C
I
=-2A, IB=-50mA*
C
=-6A, IB=-250mA*
I
C
I
=-10mA, VCE=-1V*
C
I
=-500mA, VCE=-1V*
C
=-5A, VCE=-1V*
I
C
=-10A, VCE=-1V*
I
C
I
=-20A, VCE=-1V*
C
amb
f=50MHz
nsnsIC=-4A, IB1=-400mA
=400mA, VCC=-10V
I
B2
E
C
=100°C
FZT968
TYPICAL CHARACTERISTICS
0.8
+25 °C
0.8
I
C/IB
=50
0.6
I
C/IB
=250
IC/IB=200
C/IB
=100
0.4
0.2
0
1m 100
I
IC/IB=50
IC/IB=10
10m 100m 1 10
IC- Collector Current (A)
VCE(sat) v IC
800
CE
=1V
V
+100 °C
600
+25 °C
400
-55 °C
200
0
1m 100
10m 100m 1 10
IC- Collector Current (A)
C
hFEv I
1.4
VCE=1V
-55 °C
+25 °C
+100 °C
0.7
0
1m 100
10m 100m 1 10
IC- Collector Current (A)
BE(on)
V
v IC
0.6
+100 °C
0.4
0.2
0
1m 10m 100m 1 10 100
+25 °C
-55 °C
IC- Collector Current (A)
VCE(sat) v IC
C/IB
=50
I
1.6
-55 °C
1.2
0.8
0.4
0
+25 °C
+100 °C
10m 100m 1 10
IC- Collector Current (A)
BE(sat)
v I
C
V
100
10
DC
1
0.1
1s
100ms
10ms
1ms
100µs
0.1 100
110
VCE- Collector Emitter Voltage (V)
Safe Operating Area
1001m
3 - 295
Loading...