Diodes FZT951 User Manual

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Product Line o
Green
60V PNP MEDIUM POWER TRANSISTOR IN SOT223
Features
BV
I
I
Low Saturation Voltage V
R
h
Complementary NPN Type: FZT851
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
> -60V
CEO
= -5A high Continuous Collector Current
C
= -15A Peak Pulse Current
CM
= 55m for a low equivalent On-Resistance
CE(sat)
specified up to -10A for a high gain hold up
FE
SOT223
Top View
< -140mV @ -1A
CE(sat)
B
Device S
Mechanical Data
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
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mbol
Diodes Incorporated
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT951TA AEC-Q101 FZT951 7 12 1,000
FZT951TC AEC-Q101 FZT951 13 12 4,000 FZT951QTA Automotive FZT951 7 12 1,000 FZT951QTC Automotive FZT951 13 12 4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
FZT951 Da
tasheet Number: DS33179 Rev. 4 - 2
FZT
951
FZT951 = Product Type Marking Code
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Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
-100 V
-60 V
-7 V
-5 A
-15 A
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation Linear derating factor
Thermal Resistance, Junction to Ambient
(Note 6)
(Note 7)
(Note 6)
(Note 7)
Thermal Resistance Junction to Lead (Note 8) Operating and Storage Temperature Range
P
R
R
R
T
J, TSTG
D
JA
JA
JL
3.0 24
1.6
12.8 42
78
8.84
-55 to +150
W
mWC
°C/W
°C
ESD Ratings (Note 9)
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is surface mounted on 25mm x 25mm with 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
FZT951 Da
tasheet Number: DS33179 Rev. 4 - 2
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Thermal Characteristics and Derating Information
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Diodes Incorporated
V
CE(sat)
10
Limit
1
DC
1s
100m
100ms
Single Pulse. T
Collector Current (A)
C
10m
-I
100m 1 10 100
52mmX52mm
single sided 2oz Cu
amb
10ms
=2C
1ms
10s
-VCE Collector-Emitter Voltage (V)
Safe Operating Area
52mmX52mm
40
single sided 2oz Cu
30
D=0.5
20
D=0.2
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
3.0
2.5
52mmX52mm single sided 2oz Cu
2.0
1.5
1.0
25mmX25mm
0.5
single sided 1oz Cu
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
Single Pulse. T
100
52mmX52mm
single sided 2oz Cu
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
amb
Pulse Power Dissipation
=25°C
FZT951 Da
tasheet Number: DS33179 Rev. 4 - 2
3 of 7
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December 2012
© Diodes Incorporated
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