Diodes FZT949 User Manual
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
FZT948
FZT949
ISSUE 2 - NOVEMBER 1995
FEATURES
* Extremely low equivalent on-resistance; R
* 6 Amps continuous current
CE(sat)
C
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent h
PARTMARKING DETAILS — DEVICE TYPE IN FULL
characteristics specified upto 20 Amps
FE
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT948 FZT949 UNIT
E
C
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C P
amb
CBO
CEO
EBO
CM
C
tot
T
:Tstg -55 to +150 °C
j
-40 -50 V
-20 -30 V
-6 V
-20 A
-6 -5.5 A
3W
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
TBA
FZT948
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1kΩ
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
on
t
off
-40 -55 V
-40 -55 V
I
=-100µA
C
I
=-1µA, RB ≤1kΩ
C
-20 -30 V IC=-10mA*
-6 -8 V
-50-1nA
-50-1nA
µA
µA
I
=-100µA
E
=-30V
V
CB
V
=-30V,
CB
T
=100°C
amb
=-30V
V
CB
V
=-30V,
CB
=100°C
T
amb
-10 nA VEB=-6V
-60
-130
mV
IC=-0.5A, IB=-10mA*
-110
-200
-360
-180
-280
-450
mV
mV
mV
=-2A, IB=-200mA*
I
C
I
=-4A, IB=-400mA*
C
I
=-6A, IB=-250mA*
C
-1050 -1200 mV IC=-5A, IB=-300mA*
-870 -1050 mV IC=-6A, VCE=-1V*
100
100
75
60
15
200
200
160
130
40
300
IC=-10mA, V
I
=-1A, V
C
I
=-5A, VCE =-1V*
C
I
=-10A, VCE =-1V*
C
I
=-20A, V
C
80 MHz IC=-100mA, VCE=-10V
f=50MHz
163 pF VCB=-10V, f=1MHz
120
126
nsnsIC=-4A, IB1=-400mA
=400mA, VCC=-10V
I
B2
µs. Duty cycle ≤2%
CE
CE
Spice parameter data is available upon request for this device
46mΩ at 5A
R
CE(sat)
=-1V
CE
=-1V*
=-2V*
TBA
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