Diodes FZT855 User Manual
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f
y
Product Line o
Green
150V NPN MEDIUM POWER TRANSISTOR IN SOT223
Features
Mechanical Data
Diodes Incorporated
FZT855
BV
I
I
Very Low Saturation Voltage V
R
h
Complementary PNP Type: FZT955
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
> 150V
CEO
= 5A high Continuous Collector Current
C
= 10A Peak Pulse Current
CM
< 110mV @ 1A
CE(sat)
= 50m for a Low Equivalent On-Resistance
CE(sat)
Specified Up to 10A for a High Gain Hold Up
FE
SOT223
Top View
B
Device S
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
C
E
mbol
Top View
Pin-Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT855TA FZT855 7 12 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
FZT
855
FZT855 = Product type Marking Code
FZT855
Document Number DS33176 Rev. 5 - 2
1 of 7
www.diodes.com
March 2013
© Diodes Incorporated
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Maximum Ratings (@T
= +25°C, unless otherwise specified.)
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Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Thermal Resistance Junction to Lead (Note 7)
Operating and Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
I
CM
P
R
R
R
T
J, TSTG
C
I
B
D
JA
JA
JL
Diodes Incorporated
250 V
150 V
7 V
5 A
10 A
1 A
3.0
24
1.6
12.8
42
78
8.84
-55 to +150 °C
FZT855
W
mW/°C
°C/W
ESD Ratings (Note 8)
Product Line o
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 25mm X 25mm single sided 1oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
FZT855
Document Number DS33176 Rev. 5 - 2
2 of 7
www.diodes.com
March 2013
© Diodes Incorporated
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Thermal Characteristics and Derating Information
V
CE(sat)
10
Limit
1
100m
Collector Current (A)
C
I
10m
100m 1 10 100
DC
1s
100ms
Single Pulse T
52mmX52mm
Single sided 2oz Cu
amb
=25°C
10ms
1ms
100µs
VCE Collector-Emitter Voltage (V)
Product Line o
Diodes Incorporated
3.0
2.5
52mmX52mm
2.0
Single sided 2oz Cu
1.5
1.0
0.5
0.0
Max Power Dissipation (W)
25mmX25mm
Single sided 1oz Cu
0 20 40 60 80 100 120 140 160
Temperature (°C)
FZT855
Safe Operating Area
40
52mmX52mm
Single sided 2oz Cu
100
Derating Curve
Single Pulse T
52mmX52mm
Single sided 2oz Cu
amb
=25°C
30
D=0.5
20
D=0.2
Single Pulse
10
10
D=0.05
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Transient Thermal Impedance
D=0.1
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
FZT855
Document Number DS33176 Rev. 5 - 2
3 of 7
www.diodes.com
March 2013
© Diodes Incorporated
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