Diodes FZT849 User Manual
SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance; R
* 7 Amp continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
=3 Watts
* P
tot
PARTMARKING DETAILS - FZT849
COMPLEMENTARY TYPE - FZT949
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
CE(sat)
36mΩ at 5A
FZT849
C
B
E
C
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
CBO
CEO
EBO
CM
C
tot
j:Tstg
80 V
30 V
6V
20 A
7A
3W
-55 to +150 °C
FZT849
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On Voltage V
Static Forward
Current Transfer Ratio
Transition Frequency f
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1kΩ
EBO
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
80 120 V
80 120 V
=100µA
I
C
=1µA, RB ≤1kΩ
I
C
30 40 V IC=10mA*
68 V
50
nA
1
µA
50
nA
1
µA
=100µA
I
E
V
=70V
CB
=70V, T
V
CB
V
=70V
CB
=70V, T
V
CB
10 nA VEB=6V
35
67
168
110
215
350
mV
mV
mV
=0.5A, IB=20mA*
C
I
=1A, IB=20mA*
C
=2A, IB=20mA*
I
C
I
=6.5A, IB=300mA*
C
I
mV
50
1.2 V IC=6.5A, IB=300mA
1.13 V IC=6.5A, VCE=1V*
100
100
100
30
200
200
150
65
300
I
=10mA, VCE=1V
C
=1A, VCE=1V*
I
C
=7A, VCE=1V*
I
C
I
=20A, VCE=2V*
C
100 MHz IC=100mA, VCE=10V
f=50MHz
amb
amb
=100°C
=100°C
Output Capacitance C
Switching Times t
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
75 pF VCB=10V, f=1MHz*
45
630
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 258 3 - 257
ns
ns
IC=1A, IB1=100mA
=100mA, VCC=10V
I
B2
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