Diodes FZT796A User Manual
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt V
* Gain of 250 at IC=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE - FZT696B
PARTMARKING DETAIL - FZT796A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
Emitter-Base V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-EmitterSaturationVoltage V
Base-EmitterTurn-OnVoltage V
Static Forward Current
Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
CEO
=25°C P
amb
V
(BR)CBO
V
(BR)CEO
(BR)EBO
CBO
EBO
V
CE(sat)
BE(sat)
BE(on)
h
FE
T
ibo
obo
on
t
off
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
amb
-200 V
-200 V IC=-10mA*
-5 V
-0.1
µA
-0.1
µA
V
-0.2
V
-0.3
V
-0.3
-0.95 V IC=-200mA,IB=-20mA*
-0.67 V IC=-200mA,VCE=-10V*
300
800 I
300
250
100
100 MHz IC=-50mA, VCE=-5V
225 pF VEB=-0.5V, f=1MHz
12 pF VCB=-10V, f=1MHz
100
nsnsIC=-100mA, IB1=-10mA
3200
FZT796A
C
B
-200 V
-200 V
-5 V
-1 A
-0.5 A
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
=-150V
V
CB
V
=-4V
EB
I
=-50mA, IB=-2mA*
C
=-100mA, IB=-5mA*
I
C
I
=-200mA, IB=-20mA*
C
=-10mA, VCE=-10V*
C
I
=-100mA, VCE=-10V*
C
=-300mA, VCE=-10V*
I
C
I
=-400mA, VCE=-10V*
C
f=50MHz
=-10mA, VCC=-50V
I
B2
E
C
FZT796A
TYPICAL CHARACTERISTICS
ts)
- (Vol
V
in
a
G
sed
i
mal
r
No
-
h
olts)
V
(
-
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
1.6
1.4
1.2
ts)
ol
1.0
V
(
-
0.8
0.6
0.4
V
0.2
0
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
IC/IB=20
IC/IB=10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IC/IB=40
IC/IB=20
IC/IB=10
0.01 0.1 1 10
Collector Current (Amps)
IC -
+100°C
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC-
T
VCE=10V
1
=25°C
amb
750
500
cal Gain
ypi
- T
250
h
10
-55°C
1.6
1.4
1.2
lts)
1.0
o
V
0.8
(
-
0.6
V
0.4
0.2
0
+25°C
+100°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
VCE=10V
1
0.1
DC
1s
100ms
-Collector Current (A)
C
I
0.001
0.01
10ms
1ms
100µs
1
10
VCE- Collector Emitter Voltage (V)
Safe Operating Area
100
1000
3 - 256 3 - 255
Loading...