Diodes FZT795A User Manual
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 140 Volt V
* Gain of 250 at IC=0.2 Amps and very low V
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE FZT694B
PARTMARKING DETAIL FZT795A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Cut-Off Currents I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
CEO
=25°C P
amb
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
EBO
V
CE(sat )
V
BE(sat )
V
BE(on)
h
FE
-140 V
-140 V IC=-10mA*
-5 V
300
250
100
T
ibo
obo
on
t
off
100 MHz IC=-50mA, VCE=-5V
CE(sat)
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
amb
-0.1
µA
-0.1
µA
V
-0.3
V
-0.3
V
-0.25
-0.95 V IC=-500mA, IB=-50mA*
-0.75 V IC=-500mA, VCE=-2V*
800 I
225 pF VEB=-0.5V, f=1MHz
15 pF VCB=-10V, f=1MHz
100
nsnsIC=-100mA, IB1=-10mA
1900
µs. Duty cycle ≤2%
FZT795A
C
B
-140 V
-140 V
-5 V
-1 A
-500 mA
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
=-100V
V
CB
V
=-4V
EB
I
=-100mA, IB=-1mA*
C
=-200mA, IB=-5mA*
I
C
I
=-500mA, IB=-50mA*
C
=-10mA, VCE=-2V*
C
=-200mA, VCE=-2V*
I
C
I
=-300mA, VCE=-2V*
C
f=50MHz
=-10mA, VCC=-50V
I
B2
E
C
FZT795A
TYPICAL CHARACTERISTICS
olts)
V
- (
V
n
ai
sed G
i
al
rm
No
-
h
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
IC/IB=40
IC/IB=20
IC/IB=10
0.01 0.1 1 10
T
=25°C
amb
IC- Collector Current (Amps)
CE(sat)
V
+100°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
+25°C
-55°C
0.01 0.1
v IC
1
VCE=2V
750
n
500
ypical Gai
- T
250
h
10
1.8
1.6
1.4
1.2
olts)
1.0
V
- (
0.8
0.6
0.4
V
0.2
0
0.001
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
IC/IB=40
IC- Collector Current (Amps)
CE(sat)
V
1.6
1.4
ts)
1.2
ol
V
1.0
(
-
0.8
0.6
V
0.4
0.2
0
+100°C
+175°C
0.01 0.1 1 10
+25°C
-55°C
v IC
IC/IB=10
IC- Collector Current (Amps) IC- Collector Current (Amps)
hFEv IC V
BE(sat)
v IC
ts)
ol
(V
-
V
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
+25°C
+100°C
0.01 0.1 1 10
IC-
Collector Current (Amps)
BE(on)
V
v IC
VCE=2V
1
0.1
DC
1s
100ms
0.01
0.001
10ms
1ms
100
s
µ
1
10 100
VCE- Collector Emitter Voltage (V)
Safe Operating Area
1000
3 - 254 3 - 253
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