Diodes FZT792A User Manual
SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* High gain and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE - FZT692B
PARTMARKING DETAIL - FZT792A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
FZT792A
C
B
E
C
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
-75 V
-70 V
-5 V
-5 A
-2 A
2W
-55 to +150 °C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Cut-Off Currents I
Saturation Voltages V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
EBO
CE(sat)
V
BE(sat)
-75 -100 V
=-100µA
I
C
-70 -90 V IC=-10mA*
-5 -8.5 V
-0.1
-10
-0.1
-0.45
-0.30
-0.50
-0.30
-0.50
-0.30
µA
µA
µA
V
V
V
=-100µA
I
E
V
=-40V
CB
=-40V,
V
CB
T
=100°C
amb
V
=-4V
EB
I
=-500mA, IB=-5mA*
C
=-1A, IB=-25mA*
I
C
I
=-2A, IB=-200mA*
C
-0.80 -0.95 V IC=-1A, IB=-25mA*
3 - 250
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
BE(on)
h
FE
-0.75 V IC=-1A, VCE=-2V*
300
250
200
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
100 160 MHz IC=-50mA, VCE=-5V
225 pF VEB=0.5V, f=1MHz
22 pF VCB=-10V, f=1MHz
35
750
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
800 I
nsnsIC=-500mA,
=-10mA, VCE=-2V*
C
=-500mA, VCE=-2V*
I
C
I
=-1A, VCE=-2V*
C
f=50MHz
=-50mA,
I
B1
I
=-50mA, VCC=-10V
B2
3 - 251
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