Diodes FZT790A User Manual
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; R
* Gain of 200 at I
=1 Amp and very low saturation voltage
C
CE(sat)
125mΩ at 2A
FZT790A
C
APPLICATIONS
* DC-DC converters, Siren drivers.
COMPLEMENTARY TYPE - FZT690B
PARTMARKING DETAIL - FZT790A
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-EmitterTurn-OnVoltage V
Static Forward Current
Transfer Ratio
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
-50 -70 V
-40 -60 V IC=-10mA*
-5 -8.5 V
-0.1
-10
-0.1
-0.25
-0.15
-0.45
-0.30
-0.75
-0.40
-0.8 -1.0 V IC=-1A, IB=-10mA*
-0.75 V IC=-1A, VCE=-2V*
300
800 I
250
200
150
Transition Frequency f
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
T
obo
on
t
off
100 MHz IC=-50mA, VCE=-5V
24 pF VCB=-10V,f=1MHz
35
600
µs. Duty cycle ≤2%
-50 V
-40 V
-5 V
-6 A
-3 A
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
V
µA
µA
µ
V
V
V
A
=-30V
CB
V
=-30V,
CB
V
EB
I
=-500mA, IB=-5mA*
C
=-1A, IB=-10mA*
I
C
I
=-2A, IB=-50mA*
C
=-10mA, VCE=-2V
C
=-500mA, VCE=-2V*
I
C
I
=-1A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
Tamb
=-4V
f=50MHz
nsnsIC=-500mA,
=-50mA,
I
B1
I
=-50mA, VCC=-10V
B2
E
C
=100°C
TYPICAL CHARACTERISTICS
FZT790A
olts)
V
(
-
V
Gain
alised
orm
N
-
h
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IC/IB=100
IC/IB=40
IC/IB=10
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC-
v IC
T
VCE=2V
1
amb
=25°C
750
500
al Gain
ypic
- T
250
h
10
hFEv IC V
1.8
1.6
1.4
1.2
1.0
- (Volts)
0.8
0.6
V
0.4
0.2
0
1.6
1.4
1.2
1.0
- (Volts)
0.8
0.6
V
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
-55°C
+25°C
BE(sat)
v IC
v IC
IC/IB=100
IC/IB=100
-55°C
1.6
1.4
1.2
olts)
1.0
V
(
-
0.8
0.6
V
0.4
0.2
0
0
+25°C
+100°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
BE(on)
V
v IC
VCE=2V
10
1
DC
1s
100ms
0.1
10ms
1ms
100
s
µ
0.01
0.1
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
10 100
3 - 249 3 - 248
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