Diodes FZT788B User Manual
SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; R
* Gain of 300 at I
=2 Amps and Very low saturation voltage
C
CE(sat)
93mΩ at 3A
FZT788B
C
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
(BR)CBO
(BR)CEO
(BR)EBO
CBO
EBO
V
CE(sat)
-15 V
-15 V IC=-10mA*
-5 V
-0.1
-0.1
-0.15
-0.25
-0.45
-0.5
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On Voltage V
Static Forward Current Transfer
Ratio
V
BE(sat)
BE(on)
h
FE
500
400
-0.9 V IC=-1A, IB=-5mA*
-0.75 V IC=-1A, VCE=-2V*
1500 I
300
150
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
100 MHz IC=-50mA, VCE=-5V
225 pF VEB=-0.5V, f=1MHz
25 pF VCB=-10V, f=1MHz
35
400
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 244
-15 V
-15 V
-5 V
-8 A
-3 A
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
V
µ
µA
V
V
V
A
=-10V
CB
V
=-4V
EB
I
=-0.5A, IB=-2.5mA*
C
=-1A, IB=-5mA*
I
C
I
=-2A, IB=-10mA*
C
=-3A, IB=-50mA*
I
C
=-10mA, VCE=-2V*
C
I
=-1A, VCE=-2V*
C
=-2A, VCE=-2V*
I
C
I
=-6A, VCE=-2V*
C
f=50MHz
nsnsIC=-500mA, IB1=-50mA
I
=-50mA, VCC=-10V
B2
E
C
TYPICAL CHARACTERISTICS
FZT788B
- (Volts)
V
Gain
alised
orm
N
-
h
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
IC/IB=200
IC/IB=100
IC/IB=10
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC-
v IC
T
VCE=2V
1
=25°C
amb
1200
900
al Gain
600
ypic
- T
300
h
10
hFEv IC V
1.8
1.6
1.4
1.2
1.0
- (Volts)
0.8
0.6
V
0.4
0.2
0
1.6
1.4
1.2
1.0
- (Volts)
0.8
0.6
V
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
-55°C
+25°C
BE(sat)
v IC
v IC
IC/IB=200
IC/IB=200
-55°C
1.6
1.4
1.2
1.0
- (Volts)
0.8
0.6
V
0.4
0.2
0
0
+25°C
+100°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
BE(on)
V
v IC
VCE=2V
10
1
DC
1s
100ms
0.1
10ms
1ms
100
µ
s
0.01
0.1
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
10 100
3 - 245
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