Diodes FZT758 User Manual
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 400 Volt V
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT658
PARTMARKING DETAIL FZT758
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn On Voltage V
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching times t
* Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
CEO
=25°C P
amb
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
obo
on
t
off
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
-55 to +150 °C
-400 V
-400 V IC=-10mA*
-5 V
-100 nA VCB=-320V
-100 nA VCE=-320V
-100 nA VEB=-4V
-0.30
-0.25
-0.50
V
V
V
-0.9 V IC=-100mA, IB=-10mA*
-1.0 V IC=-100mA, VCE=-5V*
50
50
40
50 MHz IC=-20mA, VCE=-20V
20 pF VCB=-20V, f=1MHz
140 Typical
2000 Typicalnsns
µs. Duty cycle ≤2%
3 - 2423 - 243
FZT758
C
B
-400 V
-400 V
-5 V
-1 A
-500 mA
2W
I
=-100µA
C
=-100µA
I
E
I
=-20mA, IB=-1mA
C
=-50mA, IB=-5mA*
I
C
I
=-100mA, IB=-10mA*
C
I
=-1mA, VCE=-5V
C
I
=-100mA, VCE=-5V*
C
=-200mA, VCE=-10V*
I
C
f=20MHz
IC=-100mA, VCC=-100V
I
=10mA, IB2=-20mA
B1
E
C
TYPICAL CHARACTERISTICS
FZT758
1.6
1.4
1.2
olts)
V
1.0
(
-
0.8
0.6
V
0.4
0.2
0
0.001 0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01 0.1 20110
Collector Current (Amps)
IC-
T
amb
=25°C
VCE(sat) v IC
ain
G
alised
orm
N
-
h
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+100°C
+25°C
-55°C
0.01 0.1 20110
Collector Current (Amps)
IC-
VCE=10V
300
in
200
100
hFEv IC V
l Ga
ypica
T
-
h
-55°C
1.6
1.4
1.2
olts)
V
(
1.0
-
0.8
0.6
V
0.4
0.2
0
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
IC/IB=10
VCE(sat) v IC
-55°C
1.6
1.4
1.2
olts)
V
1.0
(
-
0.8
0.6
V
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
BE(sat)
v IC
IC/IB=10
-55°C
1.6
1.4
1.2
olts)
1.0
V
(
-
0.8
0.6
V
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
VCE=10V
VBE(on) v IC
1
0.1
DC
1s
100ms
0.01
0.001
10ms
1ms
100
s
µ
1V
10V 100V
VCE- Collector Emitter Voltage (V)
Safe Operating Area
1000V
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