Diodes FZT757 User Manual

SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR

ISSUE 4 JANUARY 1996

FEATURES
* Low saturation voltage
* 300V V

CEO

FZT757FZT757

C

COMPLEMENTARY TYPE - FZT657
PARTMARKING DETAIL - FZT757

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

-300 V

-300 V IC=-10mA*

-5 V

-0.1

-0.1

-0.5 V IC=-100mA, IB=-10mA*

-1.0 V IC=-100mA, IB=-10mA*

-1.0 V IC=-100mA, V

40
50

30 MHz IC=-10mA, VCE =-20V

20 pF VCB=-20V, f=1MHz

µs. Duty cycle ≤2%

-300 V

-300 V

-5 V

-1 A

-0.5 A

2W

-55 to +150 °C

=-100µA

I

C

=-100µA

I

E

V

V

=-200V

CB

=-3V

EB

µA

µA

IC=-10mA, VCE =-5V*

=-100mA, VCE =-5V*

I

C

f=20MHz

CE

E

C

=-5V*

TYPICAL CHARACTERISTICS

td
tr

ts

tf

µs

g time
hin

tc

Swi

µs

4

1.6

1.4

3

1.2
ts

1.0

0.8

2

td

0.6

1

0.4

tf

0.2
tr

0

0.01

0.1

250

0.0001

IC/IB=10

0.001

0.01 0.1

1

)
V

200

m

- (

150

V

100

IB1=IB2=IC/10

VCE=10V

tf

tr

ts

td

1

(%)
ain

G

sed

i
al

orm
N

-

h

)
ts
ol

V

- (

V

100

Collector Current (Amps)

IC-

VCE(sat) v IC

1.2

80

0.001

VCE=5V

0.01 0.1

1

60

40

20

0

0.0001

Collector Current (Amps)

IC-

1.0

)
ts

ol
V

0.8

- (

0.6

V

0.4

Collector Current (Amps)

IC-

Switching Speeds

IC/IB=10

0.0001

0.001

0.01 0.1

Collector Current (Amps)

IC-

1

hFE v IC VBE(sat) v IC

1.2

1.0

0.8

0.6

0.4

IC-

VCE=5V

0.0001

0.001

0.01 0.1

Collector Current (Amps)

1

1

0.1

0.01

0.001
1 1000

VBE(on) v IC

Single Pulse Test at T

DC

100ms

10ms

1ms

300

s

µ

10 100

V

- Collector Emitter Voltage (V)

CE

Safe Operating Area

amb

=25°C

3 - 241 3 - 240