Diodes FZT755 User Manual
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2005
FEATURES
* 150 Volt V
* Low saturation voltage
*Excellent h
COMPLEMENTARY TYPE – FZT655
PARTMARKING DETAIL – FZT755
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Ran ge T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
CEO
specified up to 1A (pulsed).
FE
=25°C P
amb
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
-150 V
-150 V IC=-10mA*
-5 V
-0.1
-0.1
-0.5
µA
µA
VVIC=-500mA, IB=-50mA*
-0.5
-1.1 V IC=-500mA, IB=-50mA*
-1.0 V IC=-500mA, VCE=-5V*
50
50
300
20
30 MHz IC=-10mA, VCE=-20V
20 pF VCB=-10V f=1MHz
FZT755
C
B
-150 V
-150 V
-5 V
-2 A
-1 A
2W
-55 to +150 °C
=-100µA
I
C
I
=-100µA
E
VCB=-125V
VEB=-3V
I
=-1A, IB=-200mA*
C
IC=-10mA, VCE=-5V*
I
=-500mA, VCE=-5V*
C
I
=-1A, VCE=-5V*
C
f=20MHz
E
C
TBA
FZT755
TYPICAL CHARACTERISTICS
td
tr
ts
tf
µs
0.8
)
s
t
l
0.6
o
V
(
-
)
t
a
0.4
s
(
E
C
V
0.2
0
0.001
IC/IB=10
0.01
0.1
1
µs
0.5
2.0
0.4
e
m
i
0.3
t
g
1.0
n
i
h
0.2
c
t
i
w
0.1
S
ts
td
tf
tr
0
0.01
0.1 1
IB1=IB2=IC/10
VCE=10V
IC - Collector Current (Amps)
VCE(sat) v IC
100
)
%
(
80
n
i
a
G
60
d
e
s
i
l
a
40
m
r
o
N
-
20
E
F
h
0.001
VCE=5V
0.01
Collector Current (Amps)
IC -
100.1 1
1.0
0.8
)
s
t
l
o
V
(
0.6
-
)
t
a
s
(
E
0.4
B
V
0.2
IC - Collector Current (Amps)
Switching Speeds
IC/IB=10
0.001
Collector Current (Amps)
IC -
0.01
0.1
1
hFE v IC VBE(sat) v IC
10
1.2
0.0001
VCE=5V
0.001
0.01 0.1
1
0.1
- Collector Current (A)
C
I
1
0.01
0.1 100
)
1.0
s
t
l
o
V
(
-
0.8
E
B
V
0.6
0.4
IC - Collector Current (Amps)
VBE(on) v IC
Single Pulse T est at T
DC
100ms
10ms
1ms
300µs
110
VCE- Collector Emitter Voltage (V)
Safe Operating Area
=25°C
amb
TBA
Loading...