Diodes FZT751Q User Manual

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ECB

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Green

60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223

Description

This Bipolar Junction Transistor (BJT) has been designed to meet the
stringent requirements of Automotive Applications.

Applications

 Automotive lighting
 MOSFET and IGBT gate driving

Diodes Incorporated

FZT751Q

Features

 BV
 I
 I
 Low Saturation Voltage V
 Complementary NPN Type: FZT651Q
 Lead-Free Finish; RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4)

> -60V

CEO

= -3A high Continuous Current

C

= -6A Peak Pulse Current

CM

CE(sat)

SOT223

Top View

< -300mV @ -1A

B

Device S

Mechanical Data

 Case: SOT223
 Case material: molded plastic. “Green” molding compound.
 UL Flammability Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.112 grams (approximate)

C

E

mbol

Top View

Pin-Out

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

FZT751QTA Automotive FZT751 7 12 1,000
FZT751QTC Automotive FZT751 13 12 4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

FZT751Q

Document Number DS36963 Rev. 1 - 2

FZT
751

FZT751 = Product Type Marking Code

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Absolute Maximum Ratings (@T

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current

Thermal Characteristics (@T

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

= +25°C, unless otherwise specified.)

A

(Note 6)
(Note 7) 3 W
(Note 6)
(Note 7) 41.7

ESD Ratings (Note 9)

V

CBO

V

CEO

V

EBO

I

I

CM

P

R

R

T

J, TSTG

C

θJA

θJL

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FZT751Q

D

-80 V

-60 V

-7 V

-3 A

-6 A

2 W

62.5

12.9

-55 to +150

C/W
C/W
C/W

C

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C

Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady-state.

7. Same as note (6), except the device is mounted on 50mm x 50mm 2oz copper.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Characteristic Symbol Value Unit JEDEC Class

FZT751Q

Document Number DS36963 Rev. 1 - 2

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Thermal Characteristics and Derating Information

V

10

CE(sat)

Limit

1

DC

1s

100m

Collector Current (A)

C

I

10m

100ms

T

=25°C

amb

25mm x 25mm

2oz FR4

110

10ms

1ms

100µs

100m

Collector Current (A)
I

VCE Collector-Emitter Voltage (V)

Safe Operating Area

C

10m

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V

10

CE(sat)

Limit

1

DC

1s

100ms

T

=25°C

amb

50mm x 50mm

2oz FR4

10ms

1ms

110

VCE Collector-Emitter Voltage (V)

Safe Operating Area

FZT751Q

100µs

70

T

=25°C

60

50

40

amb

25mm x 25mm

2oz FR4

D=0.5

30

D=0.2

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

Single Pulse

T

=25°C

100

10

amb

50mm x 50mm

2oz FR4

50

T

=25°C

40

amb

50mm x 50mm

2oz FR4

30

D=0.5

20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

3.0

2.5

2.0

1.5

1.0

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

25mm x 25mm

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

2oz FR4

Pulse Width (s)

Pulse Power Dissipation

FZT751Q

Document Number DS36963 Rev. 1 - 2

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0.5

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

March 2014

© Diodes Incorporated