Diodes FZT751 User Manual

A

f

y

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

Green

60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223

Features

• BV

• I

• Low Saturation Voltage V

• Complementary NPN Type: FZT651

• Lead-Free Finish; RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

> -60V

CEO

= -3A high Continuous Current

C

= -6A Peak Pulse Current

CM

CE(sat)

SOT223

Top View

< -300mV @ -1A

B

Device S

Mechanical Data

• Case: SOT223

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

Applications

• Automotive lighting

• MOSFET and IGBT gate driving

E

mbol

Diodes Incorporated

C

Top View

Pin-Out

FZT751

E

C

B

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

FZT751TA AEC-Q101 FZT751 7 12 1,000

FZT751QTA Automotive FZT751 7 12 1,000

FZT751TC AEC-Q101 FZT751 13 12 4,000

FZT751QTC Automotive FZT751 13 12 4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com

Marking Information

FZT 751

FZT751 = Product Type Marking Code

FZT751

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Maximum Ratings (@T

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current

Thermal Characteristics (@T

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

(Note 6) (Note 7) 3 W (Note 6) (Note 7) 41.7

ESD Ratings (Note 10)

V

CBO

V

CEO

V

EBO

I

CM

P

R

T

J, TSTG

C

θJA

θJL

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FZT751

D

-80 V

-60 V

-7 V

-3 A

-6 A

2 W

62.5

12.93

-55 to +150

°C/W °C/W °C/W

°C

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 7. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when

operating in steady state condition.

8. Same as note (7), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Characteristic Symbol Value Unit JEDEC Class

FZT751

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Thermal Characteristics and Derating Information

V

10

CE(sat)

Limit

1

DC

1s

100m

Collector Current (A)

C

I

10m

100ms

T

=25°C

amb

25mm x 25mm

2oz FR4

110

10ms

1ms

100µs

100m

Collector Current (A) I

VCE Collector-Emitter Voltage (V)

Safe Operating Area

C

10m

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V

10

CE(sat)

Limit

1

DC

1s

100ms

T

=25°C

amb

50mm x 50mm

2oz FR4

10ms

1ms

110

VCE Collector-Emitter Voltage (V)

Safe Operating Area

FZT751

100µs

70

T

=25°C

60

50

40

amb

25mm x 25mm

2oz FR4

D=0.5

30

D=0.2

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

Single Pulse

T

=25°C

100

10

amb

50mm x 50mm

2oz FR4

50

T

=25°C

40

amb

50mm x 50mm

2oz FR4

30

D=0.5

20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

3.0

2.5

2.0

1.5

1.0

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

25mm x 25mm

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

2oz FR4

Pulse Width (s)

Pulse Power Dissipation

FZT751

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0.5

0.0 0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

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Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 11) Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Saturation Voltage (Note 11)

Base-Emitter Saturation Voltage (Note 11) Base-Emitter Turn-On Voltage (Note 11)

DC Current Gain (Note 11)

Current Gain-Bandwidth Product (Note 11)

Turn-On Time Turn-Off Time Output Capacitance (Note 11)

Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%

BV BV BV

I

V

CE(sat)

V

CE(sat

V

BE(on

h

C

CBO

CEO

EBO

CBO

EBO

FE

f

T

t

on

t

off

obo

Diodes Incorporated

-80

-60

-7

−

− −

−

70 200

100 200 300

80 170 40 150

100 140

−

− −

<1 -100 nA

-10 µA

<1 -100 nA

-0.15 -0.3

-0.45 -0.6

-0.9 -1.25 V

-0.8 -1.0 V

−

40

450

−

30 pF

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V

IC = -100µA

V

IC = -10mA

V

IE = -100µA

= -60V

V

CB

V

= -60V, T

CB

V

= -4V

EB

I

= -1A, IB = -100mA

C

V

I

= -3A, IB = -300mA

C

IC = -1A, IB = -100mA IC = -1A, V

= -50mA, V

I

C

IC = -500mA, V

− I

= -1A, V

C

I

= -2A, V

C

= -5V, IC = -100mA

V

MHz

ns ns

CE

f = 100MHz V

= -10V, IC = -500mA

CC

= IB2 = -50mA

I

B1

V

= -10V, f = 1MHz

CB

CE

FZT751

= 100°C

amb

= -2V

CE

= -2V

CE

= -2V = -2V

FZT751

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Typical Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

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FZT751

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

A1

Dim Min Max Typ

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y1

Y2

X2

X1

C2

C1

Dimensions Value (in mm)

X1 3.3 X2 1.2 Y1 1.6 Y2 1.6 C1 6.4 C2 2.3

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FZT751

SOT223

A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50 E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

FZT751

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

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FZT751

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FZT751

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