Diodes FZT749 User Manual

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Product Line o



Green

25V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223

Features

Mechanical Data

Diodes Incorporated

FZT749

 BV
 I
 I
 Low Saturation Voltage V
 Complementary NPN Type: FZT649
 Lead-Free Finish; RoHS compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP capable (Note 4)

> -25V

CEO

= -3A High Continuous Current

C

= -8A Peak Pulse Current

CM

CE(sat)

SOT223

Top View

< -300mV @ -1A

B

Device S

 Case: SOT223
 Case material: molded plastic. “Green” molding compound.
 UL Flammability Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.112 grams (approximate)

Applications

 MOSFET and IGBT Gate Driving

E

E

mbol

C

Top View

Pin-Out

C

B

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

FZT749TA AEC-Q101 FZT749 7 12 1,000

FZT749QTA Automotive FZT749 7 12 1,000

FZT749TC AEC-Q101 FZT749 13 12 4,000

FZT749QTC Automotive FZT749 13 12 4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.

Marking Information

FZT

FZT

749

751

FZT749 = Product Type Marking Code

FZT749

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Maximum Ratings (@T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current

Thermal Characteristics (@T

Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead (Note 8)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

(Note 6)
(Note 7) 3 W
(Note 6)
(Note 7) 41.7 °C/W

ESD Ratings (Note 9)

V

CBO

V

CEO

V

EBO

I

I

CM

P

R
R

T

J, TSTG

C

θJA

θJL

Product Line o

Diodes Incorporated

FZT749

D

-35 V

-25 V

-7 V

-3 A

-8 A

2 W

62.5 °C/W

12.93 °C/W

-55 to +150 °C

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM ≥ 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air when
conditions whilst operating in steady-state.

7. Same as note (6), except the device is mounted on 50mm x 50mm 2oz copper.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

FZT749

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Thermal Characteristics and Derating Information

V

10

CE(sat)

Limit

1

DC

1s

100m

Collector Current (A)

C

I

10m

100ms

T

=25°C

amb

25mm x 25mm

2oz FR4

110

10ms

1ms

100µs

100m

Collector Current (A)
I

VCE Collector-Emitter Vol tag e (V)

Safe Operating Area

C

10m

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V

10

CE(sat)

Limit

1

DC

1s

100ms

T

=25°C

amb

50mm x 50mm

2oz FR4

110

10ms

1ms

VCE Collector-Emitter Vol tag e (V)

Safe Operating Area

FZT749

100µs

70

T

=25°C

60
50
40
30
20
10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Re si stance (°C / W )

amb

25mm x 25mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Puls e Width (s)

Transient Therm al Impedance

Single Pulse

T

=25°C

100

10

amb

50mm x 50mm

2oz FR4

50

T

=25°C

40

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W )

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Puls e Width (s)

Transient Thermal Impedance

3.0

2.5

2.0

1.5

1.0

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

25mm x 25mm

1

100µ 1m 10m 100m 1 10 100 1k

Max Powe r Dissipati o n (W )

2oz FR4

Pulse Width (s)

Pulse Power Dissipation

FZT749

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0.5

0.0
0 20 40 60 80 100 120 140 160

Max Powe r Dissipati o n (W )

Temperature (°C)

Derating Curve

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Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BV
Collector-Emitter Breakdown Voltage (Note 11) BV
Emitter-Base Breakdown Voltage BV

Collector Cut-off Current I

Emitter Cut-off Current I
Collector-Emitter Saturation Voltage (Note 11) V

Base-Emitter Saturation Voltage (Note 11) V
Base-Emitter Turn-On Voltage (Note 11) V

-35 — — V

CBO

-25 — — V

CEO

-7 — — V

EBO

CBO

— <1 -100 nA

EBO

CE(SAT)

CE(SAT)

BE(ON)

— <1 -100 nA
— — -10 µA

— -0.12 -0.3
— -0.40 -0.6

— -0.9 -1.25 V

— -0.8 -1.0 V

70 200 —

DC Current Gain (Note 11) hFE

100 200 300

75 570 —

15 50 —
Current Gain-Bandwidth Product (Note 11) fT 100 160 — MHz
Turn-On Time ton — 40 — ns

Turn-Off Time t
Output Capacitance (Note 11) C

Note: 11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

— 450 — ns

off

— 55 100 pF

obo

Diodes Incorporated

= -100µA

I

C

I

= -10mA

C

I

= -100µA

E

V

CB

V

CB

V

EB

I

= -1A, IB = -100mA

C

V

I

= -3A, IB = -300mA

C

I

= -1A, IB = -100mA

C

= -1A, V

I

C

I

= -50mA, V

C

I

= -1A, V

—

C

= -2A, V

I

C

= -6A, V

I

C

V

CE

f = 100MHz
V

CC

I

B1

V

CB

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FZT749

= -30V
= -30V, T
= -5.6V

= -5V, IC = -100mA

= -10V, IC = -500mA

= IB2 = -50mA

= -10V, f = 1MHz

CE

CE
CE
CE

= +100°C

AMB

= -2V

= -2V

CE

= -2V
= -2V
= -2V

FZT749

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Typical Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

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FZT749

FZT749

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

A1

Dim Min Max Typ

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y1

Y2

X2

X1

C2

C1

Dimensions Value (in mm)

X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3

Product Line o

Diodes Incorporated

FZT749

SOT223

A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b1 2.90 3.10 3.00
b2 0.60 0.80 0.70

C 0.20 0.30 0.25

D 6.45 6.55 6.50

E 3.45 3.55 3.50
E1 6.90 7.10 7.00

e — — 4.60

e1 — — 2.30

L 0.85 1.05 0.95

Q 0.84 0.94 0.89

All Dimensions in mm

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

Diodes Incorporated

FZT749

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FZT749

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