Diodes FZT717 User Manual
FZT717
SOT223 PNP medium power transistor
Summary
BV
= -12V; IC = 3A
CEO
Description
Packaged in the SOT223 outline this low saturation 12V PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
• 2W power dissipation
• 3A continuous current
• Excellent h
• Low saturation voltage
characteristics up to 10A (pulsed)
FE
Applications
• Battery charging
• MOSFET and IGBT gate driving
• Motor drive
C
B
E
E
Ordering information
Device Reel size
(inches)
FZT717TA 7 12 1,000
Tape width
(mm)
Quantity
per reel
C
Pinout - top view
C
B
Device marking
FZT717
Issue 2 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
FZT717
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Peak pulse current I
Continuous collector current
(a)
Base current I
Power dissipation at T
amb
=25°C
(a)
CBO
CEO
EBO
CM
I
C
B
P
D
Linear derating factor
Operating and storage temperature range T
j
, T
stg
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient R
JA
-12 V
-12 V
-5 V
-10 A
-3 A
-500 mA
2W
-55 to +150 °C
62.5 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper in still air
conditions.
Issue 2 - September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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