SOT223 PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 - OCTOBER 1995
FEATURES
* 2A CONTINUOUS CURRENT
* FAST SWITCHING
* GUARANTEED HFE SPECIFIED UP TO 2A
COMPLEMENTARY TYPE FZT 605
PART MARKING DETAIL FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off
Current
Emitter Cut-Off Current I
SaturationVoltages V
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Transitional
Frequency
Output Capacitance C
Switching Times T
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
EBO
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
on
T
off
-140 V IC=-100mA
-120 V IC=-10mA*
-10 V
3000
3000
3000
2000
CBO
CEO
EBO
CM
C
TOT
= 25°C unless otherwise stated).
amb
-0.1
-10
-10
-0.1
µA
µA
µA
µA
-1.3
-2.5VV
-1.8 V IC=-1A, IB=-10mA
-1.7 V IC=-1A, VCE=-5V
30000
160 MHz IC=-100mA, VCE=-10V
15 pF VEB=-10V, f=1MHz
0.6
0.8
µs. Duty cycle ≤2%
µs
µs
FZT705
C
B
-140 V
-120 V
-10 V
-4 A
-2 A
2W
=-100µA
I
E
V
=-120V
CB
=-120V, T
V
CB
V
=-80V
CES
V
=-8V
EB
IC=-1A, IB=-1mA
=-2A, IB=-2mA
I
C
I
=-10mA, VCE=-5V
C
I
=-100mA, VCE=-5V
C
=-1A, VCE=-5V
I
C
I
=-2A, VCE=-5V
C
f=20MHz
I
=-0.5A, VCE=-10V
C
I
=0.5mA
B1=IB2
amb
=100°C
E
C
3 - 230
TYPICAL CHARACTERISTICS
FZT705
FZT704
-55°C
1.8
1.6
)
ts
1.4
1.2
(Vol
-
1.0
0.8
V
0.6
0.4
0.2
0.001
1.8
1.6
)
1.4
ts
1.2
(Vol
-
1.0
0.8
0.6
V
0.4
0.2
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
CE(sat)
V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC-
BE(sat)
V
v IC
v IC
IC/IB=1000
IC/IB=1000
n
Gai
-
h
)
ts
(Vol
-
V
16k
14k
12k
10k
+100°C
+25°C
-55°C
8k
6k
4k
2k
0
0.001
0.01 0.1 20110
Collector Current (Amps)
IC-
VCE=-5V
hFEv IC
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.001
-55°C
+25°C
+100°C
0.01 0.1 20110
Collector Current (Amps)
IC-
BE(on)
V
v IC
VCE=-5V
Single Pulse Test at T
10
1
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
110
VCE- Collector Voltage (Volts) VCE- Collector Voltage (Volts)
Safe Operating Area Safe Operating Area
=25 °C Single Pulse Test at T
amb
10
1
D.C.
100ms
10ms
1.0ms
100µs
1s
100
1000
0.1
1 10 100 1000
FZT704
3 - 231
amb
=25 °C
FZT705