Diodes FZT696B User Manual
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 FEBRUARY 1997
FEATURES
* 250 Volt V
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL FZT696B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage V
Base-Emitter Turn-OnVoltage V
Static Forward Current Transfer
Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
CEO
=25°C P
amb
V
(BR)CBO
V
(BR)CEO
(BR)EBO
CBO
EBO
V
CE(sat)
BE(sat)
BE(on)
h
FE
T
ibo
obo
on
t
off
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
amb
180 V
180 V IC=10mA*
5V
0.1
0.1
0.2
0.2
0.25
0.9 V IC=200mA, IB=5mA*
0.9 V IC=200mA, VCE=5V*
500
150
70 MHz IC=50mA, VCE=5V
200 pF VEB=0.5V, f=1MHz
6pFV
80
4400
µs. Duty cycle ≤2%
FZT696B
C
B
180 V
180 V
5V
1A
0.5 A
2W
-55 to +150 °C
=100µA
I
C
=100µA
I
E
V
µA
µA
V
V
V
nsnsIC=100mA, IB1=10mA
=140V
CB
V
=4V
EB
I
=50mA, IB=0.5mA*
C
=100mA, IB=2mA*
I
C
I
=200mA, IB=5mA*
C
IC=100mA, VCE=5V*
=200mA, VCE=5V*
I
C
f=50MHz
=10V, f=1MHz
CE
I
=10mA, VCC=50V
B2
E
C
3 - 227
FZT696B
TYPICAL CHARACTERISTICS
ts)
l
o
- (V
V
in
Ga
d
se
i
l
a
m
r
- No
h
IC/IB=100
0.8
0.6
0.4
0.2
0
IC/IB=50
IC/IB=10
0.01 0.1 1 10
IC- Collector Current (Amps)
CE(sat)
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
+100°C
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC-
v IC
hFEv IC V
1
amb
T
VCE=5V
=25°C
10
1.5K
1K
500
n
i
Ga
l
ca
ypi
- T
h
ts)
l
o
- (V
V
ts)
l
o
- (V
V
0.8
0.6
0.4
0.2
0
+100°C
+175°C
0.01 0.1 1 10
IC- Collector Current (Amps)
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
-55°C
+25°C
CE(sat)
-55°C
+25°C
BE(sat)
IC/IB=50
v IC
IC/IB=50
v IC
ts)
l
o
- (V
V
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
BE(on)
V
v IC
VCE=5V
1
0.1
DC
1s
100ms
0.01
0.001
10ms
1ms
100
µ
s
1V
10V 100V
VCE- Collector Emitter Voltage (V)
Safe Operating Area
1000V
3 - 228
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