Diodes FZT694B User Manual
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* High V
* Gain of 400 at I
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
PARTMARKING DETAIL - FZT694B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
/ Very Low Saturation Voltage
CEO
=200mA
C
=25°C P
amb
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
amb
120 V
120 V IC=10mA*
5V
0.1
0.1
0.25
0.5VV
0.9 V IC=1A, IB=10mA*
0.9 V IC=1A, VCE=2V*
500
400
150
130 MHz IC=50mA, VCE=5V
200 pF VEB=0.5V, f=1MHz
9pFV
80
2900
µs. Duty cycle ≤2%
FZT694B
C
B
120 V
120 V
5V
2A
1A
2W
-55 to +150 °C
=100µA
I
C
=100µA
I
E
V
µ
µA
ns
ns
A
=100V
CB
V
=4V
EB
IC=100mA, IB=0.5mA*
=400mA, IB=5mA*
I
C
I
=100mA, VCE=2V
C
IC=200mA, VCE=2V*
I
=400mA, VCE=2V*
C
f=50MHz
=10V, f=1MHz
CB
IC=100mA, IB!=10mA
=10mA, VCC=50V
I
B2
E
C
*
FZT694B
TYPICAL CHARACTERISTICS
)
ts
l
o
- (V
V
n
i
Ga
d
se
i
l
a
m
r
- No
h
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
IC/IB=200
IC/IB=100
IC/IB=10
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1
v IC
1
amb
T
VCE=2V
=25°C
10
1.5K
1K
500
n
i
Ga
l
ca
ypi
- T
h
)
ts
l
o
- (V
V
)
ts
l
o
- (V
V
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+175°C
0.01 0.1 1 10
+25°C
v IC
-55°C
IC/IB=100
IC/IB=100
IC- Collector Current (Amps) IC- Collector Current (Amps)
hFEv IC V
BE(sat)
v IC
)
ts
l
o
- (V
V
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
BE(on)
V
v IC
VCE=2V
10
1
DC
1s
100ms
0.1
10ms
1ms
100us
0.01
1
10
VCE- Collector Emitter Voltage (V)
Safe Operating Area
100
1000
3 - 226 3 - 225
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