Diodes FZT690B User Manual
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; R
* Gain of 400 at I
=1 Amp
C
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL FZT690B
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX.UNIT CONDITIONS.
CE(sat)
amb
125mΩ at 2A
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
FZT690B
C
B
45 V
45 V
5V
6A
3A
2W
-55 to +150 °C
E
C
Collector-Base Breakdown
Voltage
Collector-EmitterBreakdown V
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn-On Voltage V
Static Forward Current
Transfer Ratio
V
(BR)CBO
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
45 V
45 V IC=10mA*
5V
500
400
150
50
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
150 MHz IC=50mA,VCE=5V,f=50MHz
200 pF VEB=0.5V, f=1MHz
16 pF VCB=10V, f=1MHz
33
1300
µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 221
=100µA
I
C
=100µA
I
E
0.1
0.1
0.1
0.5VV
V
µA
µA
=35V
CB
V
=4V
EB
IC=0.1A, IB=0.5mA*
I
=1A, IB=5mA*
C
0.9 V IC=1A, IB=10mA*
0.9 V IC=1A, VCE=2V*
I
=100mA,VCE=2V*
C
I
=1A, VCE=2V*
C
=2A, VCE=2V*
I
C
I
=3A, VCE=2V*
C
nsnsIC=500mA, IB!=50mA
=50mA, VCC=10V
I
B2
FZT690B
TYPICAL CHARACTERISTICS
ts)
- (Vol
V
n
ai
sed G
i
al
orm
- N
h
T
amb
0.8
0.6
0.4
0.2
0
IC/IB=200
IC/IB=100
IC/IB=10
0.01 0.1 1 10
=25°C
0.8
ts)
0.6
- (Vol
0.4
V
0.2
0
IC- Collector Current (Amps)
CE(sat)
V
+100°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC-
v IC
1
VCE=2V
1.5K
1K
cal Gain
ypi
500
- T
h
10
1.6
1.4
ts)
1.2
1.0
- (Vol
0.8
0.6
V
0.4
0.2
0
hFEv IC V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
IC/IB=100
IC- Collector Current (Amps)
CE(sat)
V
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
-55°C
+25°C
BE(sat)
v IC
v IC
IC/IB=100
-55°C
1.6
1.4
1.2
ts)
1.0
- (Vol
0.8
V
0.6
0.4
0.2
0
0
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
VCE=2V
VBE(on) v IC
10
1
DC
1s
100ms
0.1
10ms
1ms
100
µ
s
0.01
0.1
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
10 100
3 - 222
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