Diodes FZT689B User Manual
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Gain of 400 at I
* Extremely low equivalent on-resistance; R
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL - FZT689B
COMPLEMENTARY TYPE - FZT789B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
Emitter-Base V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-EmitterSaturationVoltage V
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
=2 Amps and low saturation voltage
C
=25°C P
amb
V
(BR)CBO
V
(BR)CEO
(BR)EBO
CBO
EBO
V
CE(sat)
BE(sat)
V
BE(on)
h
FE
92mΩ at 3A
CE(sat)
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
amb
20 V
20 V IC=10mA*
5V
500
400
150
T
ibo
obo
on
t
off
150 MHz IC=50mA, VCE=5V
s. Duty cycle ≤2%
µ
C
B
20 V
20 V
5V
8A
3A
2W
-55 to +150 °C
=100µA
I
C
=100µA
I
E
µA
µA
V
V
V
V
=16V
CB
V
=4V
EB
I
=0.1A, IB=0.5mA*
C
I
=2A, IB=10mA*
C
=3A, IB=20mA*
I
C
0.1
0.1
0.10
0.50
0.45
0.9 V IC=1A, IB=10mA*
0.9 V IC=1A, VCE=2V*
I
=0.1A, VCE=2V*
C
I
=2A, VCE=2V*
C
=6A, VCE=2V*
I
C
f=50MHz
200 pF VEB=0.5V, f=1MHz
16 pF VCB=10V, f=1MHz
30
800
nsnsIC=500mA,IB1=50mA
I
=50mA, VCC=10V
B2
E
C
FZT689B FZT689B
TYPICAL CHARACTERISTICS
olts)
(V
-
V
1.6
1.4
1.2
1.0
0.8
alised Gain
m
0.6
0.4
- Nor
0.2
h
0
T
amb
0.8
0.6
0.4
0.2
0
0
IC/IB=200
IC/IB=100
IC/IB=10
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1
Collector Current (Amps)
IC-
v IC
=25°C
VCE=2V
1.5K
n
i
1K
Ga
al
ypic
500
- T
h
10
1
s)
t
ol
(V
-
V
olts)
(V
-
V
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
hFEv IC V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
CE(sat)
V
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
-55°C
+25°C
BE(sat)
v IC
v IC
IC/IB=100
IC/IB=100
-55°C
1.6
1.4
1.2
olts)
1.0
(V
-
0.8
V
0.6
0.4
0.2
0
0
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC-
BE(on)
V
v IC
VCE=2V
10
1
DC
1s
100ms
0.1
10ms
1ms
100
µ
s
0.01
0.1
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
10
100
3 - 220 3 - 219
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