Diodes FZT688B User Manual
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Extremely low equivalent on resistance; R
* Gain of 400 at I
=3 Amps and very low saturation voltage
C
APPLICATIONS
* Flash gun convertors & Battery powered circuits
PARTMARKING DETAIL FZT688B
COMPLEMENTARY TYPE - FZT788B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter SaturationVoltage V
Base-Emitter Turn-On Voltage V
Static Forward Current Transfer
Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
BE(sat)
BE(on)
h
FE
T
ibo
obo
on
t
off
83mΩ at 3A
CE(sat)
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C)
amb
12 V
12 V IC=10mA*
5V
0.1
0.1
0.04
0.06
0.18
0.35
0.40
1.1 V IC=3A, IB=20mA*
1.0 V IC=3A, VCE=2V
500
400
100
150 MHz IC=50mA,VCE=5V
200 pF VEB=0.5Vf=1MHz
40 pF VCB=10V,f=1MHz
40
500
µs. Duty cycle ≤2%
FZT688B
C
B
12 V
12 V
5V
10 A
4A
2W
-55 to +150 °C
I
=100µA
C
I
=100µA
E
=10V
V
µA
µA
V
V
V
V
V
ns
ns
CB
=4V
V
EB
=0.1A, IB=1mA
I
C
=0.1A,IB=0.5mA*
I
C
=1A, IB=50mA*
I
C
=3A, IB=20mA*
I
C
=4A, IB=50mA*
I
C
=0.1A, VCE=2V*
I
C
=3A, VCE=2V*
I
C
=10A, VCE=2V*
I
C
f=50MHz
I
=500mA, IB1=50A
C
=50mA, VCC=10V
I
B2
E
C
FZT688B
TYPICAL CHARACTERISTICS
T
=25°C
0.8
ts)
0.6
- (Vol
0.4
V
0.2
0
IC/IB=200
IC/IB=100
IC/IB=10
0.01 0.1 1 10
IC-
Collector Current (Amps)
amb
0.8
ts)
0.6
- (Vol
0.4
V
0.2
0
VCE(sat) v IC
1.6
1.4
n
ai
1.2
G
1.0
sed
i
0.8
al
m
0.6
or
N
0.4
-
0.2
h
0
0
+100°C
+25°C
-55°C
0.01 0.1
VCE=2V
1.5K
in
1K
cal Ga
Typi
500
-
h
10
1
1.6
1.4
ts)
1.2
1.0
- (Vol
0.8
0.6
V
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
IC-
Collector Current (Amps)
IC/IB=100
VCE(sat) v IC
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
IC/IB=100
IC- Collector Current (Amps) IC- Collector Current (Amps)
hFEv IC V
BE(sat)
v IC
-55°C
1.6
1.4
1.2
ts)
1.0
- (Vol
0.8
V
0.6
0.4
0.2
0
0
+25°C
+100°C
+175°C
0.01 0.1 1 10
VCE=2V
10
1
DC
1s
100ms
0.1
10ms
1ms
0.01
100µs
0.1V
V
1V
CE -
Collector Emitter Voltage (V)
10V
100V
-Collector Current (A)
C
I
IC- Collector Current (Amps)
BE(on)
V
v IC
Safe Operating Area
3 - 218 3 - 217
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