Diodes FZT657 User Manual

SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES * Low saturation voltage
COMPLEMENTARY TYPE - FZT757
PARTMARKING DETAIL - FZT657
ABSOLUTE MAXIMUM RATINGS.
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current I
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
300 V
300 V IC=10mA*
5V
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
0.1
-55 to +150 °C
µA
FZT657FZT657
C
B
300 V
300 V
5V
1A
0.5 A
2W
=100µA
I
C
=100µA
I
E
V
=200V
CB
E
C
Emitter Cut-Off Current I
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse Width=300 Spice parameter data is available upon request for this device
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
40 50
30 MHz IC=10mA, V
0.1
0.5 V IC=100mA, IB=10mA*
1.0 V IC=100mA, IB=10mA*
1.0 V IC=100mA, VCE =5V*
20 pF VCB =20V, f=1MHz
µs. Duty cycle 2%
µA
V
=3V
EB
IC=10mA, VCE =5V*
=100mA, VCE =5V*
I
C
=20V
f=20MHz
CE
TYPICAL CHARACTERISTICS
1.8
1.6
1.4
)
1.2
ts
l o
1.0
V (
-
0.8
0.6
0.4
V
0.2 0
0.01
IC/IB=10
0.1
101
IC- Collector Current (Amps)
CE(sat)
V
1.2
) ts
l
1.0
o V (
-
0.8
V
0.6
0.4
IC/IB=10
0.01
v IC
100.1 1
IC- Collector Current (Amps)
VBE(sat) v IC
) %
( n
i a
sed G
i
al m
Nor
-
h
) ts ol
V (
-
V
100
80
60
40
20
0
VCE=5V
0.01
IC- Collector Current (Amps)
1.2
1.0
0.8
0.6
0.4
VCE=5V
0.01
IC- Collector Current (Amps)
V
hFE v IC
BE(on)
100.1 1
100.1 1
v IC
1
SinglePulse Test at T
0.1
DC
0.01
0.001
100ms
10ms
1ms
300µs
11000
10 100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
amb
=25°C
td tr tf µs
ts
1.4
1.2
e
1.0
m
0.8
ng ti
0.6
itchi
0.4
w S
0.2
0
0.01
tf
td
tr
IC- Collector Current (Amps)
Switching Speeds
3 - 214 3 - 213
IB1=IB2=IC/10
VCE=10V
ts µs
3
2
1
0.1
0
1
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