Diodes FZT655 User Manual
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Product Line o
Green
150V NPN MEDIUM POWER TRANSISTOR IN SOT223
Features
• BV
• I
• Low Saturation Voltage
• Complementary PNP Type – FZT755
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
> 150V
CEO
= 1A high Continuous Current
C
SOT223
Top View
Device S
Mechanical Data
• Case: SOT223
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
mbol
Diodes Incorporated
Top View
Pin-Out
FZT655
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT655TA FZT655 7 12 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
FZT
655
FZT655 = Product type Marking Code
FZT655
Document Number DS33151 Rev. 4 - 2
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FZT655
Maximum Ratings (@T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Thermal Characteristics (@T
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 5)
(Note 6) 3 W
(Note 5)
(Note 6) 41.7
P
R
R
T
J, TSTG
θJA
θJL
D
150 V
150 V
7 V
1 A
2 A
2 W
62.5
19.41
-55 to +150
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 8)
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
FZT655
Document Number DS33151 Rev. 4 - 2
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December 2012
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Thermal Characteristics and Derating Information
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Diodes Incorporated
FZT655
70
T
=25°C
60
50
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resi stance (°C/W)
amb
25mm x 25mm
2oz FR4
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T
=25°C
100
10
amb
50mm x 50mm
2oz FR4
50
T
=25°C
40
30
20
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (° C/ W)
amb
50mm x 50mm
2oz FR4
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedan ce
3.0
2.5
2.0
1.5
1.0
50mm x 50mm
2oz FR4
25mm x 25mm
2oz FR4
25mm x 25mm
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
2oz FR4
Pulse Width (s)
Pulse Power Dissipation
0.5
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derat in g Curve
FZT655
Document Number DS33151 Rev. 4 - 2
3 of 7
www.diodes.com
December 2012
© Diodes Incorporated
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