Diodes FZT651Q User Manual

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60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223

Description

Mechanical Data

Diodes Incorporated

FZT651Q

This Bipolar Junction Transistor (BJT) has been designed to meet the

stringent requirements of Automotive Applications.

Features

• BV

• I

• I

• Low Saturation Voltage V

• Complementary PNP Type: FZT751Q

• Lead-Free Finish; RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable (Note 4)

> 60V

CEO

= 3A High Continuous Current

C

= 6A Peak Pulse Current

CM

CE(sat)

Top View

< 300mV @ 1A

SOT223

Device S

• Case: SOT223

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

mbol

Top View

Pin-Out

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

FZT651QTA Automotive FZT651 7 12 1,000
FZT651QTC Automotive FZT651 13 12 4,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

FZT651 = Product Type Marking Code

FZT651Q

Document Number DS36917 Rev. 1 - 2

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February 2014

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Absolute Maximum Ratings (@T

Characteristic Symbol Value Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

= +25°C, unless otherwise specified.)

A

V

CBO

V

CEO

V

EBO

I

C

I

CM

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Diodes Incorporated

FZT651Q

80 V

60 V

7 V

3 A

6 A

Thermal Characteristics (@T

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Leads (Note 8)

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

(Note 6)

(Note 7) 3 W

(Note 6)

(Note 7) 41.7

P

R

R

T

J, TSTG

θJA

θJL

D

2 W

62.5

12.9

-55 to +150

°C/W

°C/W

°C/W

°C

ESD Ratings (Note 9)

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3a

Electrostatic Discharge - Machine Model ESD MM 400 V C

Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

conditions whilst operating in steady-state.

7. Same as note (6), except the device is mounted on 50mm x 50mm 2oz copper.

FZT651Q

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Thermal Characteristics and Derating Information

V

10

CE(sat)

Limit

10

V

CE(sat)

Limit

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FZT651Q

1

DC

1s

100m

Collector Current (A)

C

I

10m

100ms

T

=25°C

amb

25mm x 25mm

2oz FR4

110

10ms

1ms

100µs

VCE Collector-Emitter Voltage (V)

Safe Operating Area

70

T

=25°C

60

50

40

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

amb

25mm x 25mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1

DC

1s

100m

Collector Current (A)

C

10m

I

100ms

T

=25°C

amb

50mm x 50mm

2oz FR4

110

10ms

1ms

100µs

VCE Collector-Emitter Voltage (V)

Safe Operating Area

50

T

=25°C

40

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

Single Pulse

T

=25°C

100

10

25mm x 25mm

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

2oz FR4

Pulse Width (s)

amb

50mm x 50mm

2oz FR4

Pulse Power Dissipation

FZT651Q

Document Number DS36917 Rev. 1 - 2

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3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

Derating Curve

February 2014

© Diodes Incorporated