Diodes FZT603 User Manual
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful h
* Fast Switching
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
=150°C
T
j
up to 6A
FE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
CES
V
CE(sat)
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
-55 to +150 °C
100 240 V
80 110 V IC=10mA*
10 16 V
0.01
µA
10
µA
0.1
µA
10
µA
V
0.88
0.79
0.80
0.88
0.99
0.86
0.90
1.00
1.13
V
V
V
V
FZT603
C
B
100 V
80 V
10 V
6A
2A
2W
=100µA
I
C
=100µA
I
E
V
=80V
CB
V
=80V, T
CB
V
EB
V
CES
I
=0.25A, IB=0.25mA*
C
=0.4A, IB=0.4mA*
I
C
=1A, IB=1mA*
I
C
I
=2A, IB=20mA*
C
I
=2A, IB=20mA
C
amb
=8V
=80V
E
C
=100°C
FZT603
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On Voltage V
Static Forward
Current Transfer Ratio
V
BE(sat)
BE(on)
h
FE
1.7 1.95 V IC=2A, IB=20mA*
1.5 1.75 V IC=2A, VCE=5V*
14k
3k
5k
3k
2k
15k
14k
10k
100k
2k
750
Transition Frequency f
Output Capacitance C
Output Capacitance C
Switching Times t
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle
Spice parameter data is available upon request for this device
T
ibo
obo
on
t
off
150 MHz IC=100mA, VCE=10V
90 pF VEB=500mV, f=1MHz
15 pF VCB=10V, f=1MHz
0.5
1.6
≤2%
µs
µs
I
=50mA, VCE=5V*
C
=500mA, VCE=5V*
I
C
I
=1A, VCE=5V*
C
=2A, VCE=5V*
I
C
I
=5A, VCE=5V*
C
=6A, VCE=5V*
I
C
f=20MHz
I
=0.5A, VCE=10V
C
=0.5mA
I
B1=IB2
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