Diodes FZT600 User Manual

SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR

ISSUE 3  FEBRUARY 1997

FEATURES
* 2A continuous current
* 140 VOLT V
* Guaranteed hFE Specified up to 1A

PART MARKING DETAIL  FZT600

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base

Breakdown Voltage
Collector-Emitter

Breakdown Voltage
Emitter-Base Breakdown

Voltage
Collector Cut-Off Current I

Collector Cut-Off Current I
Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter Saturation Voltage V
Base-Emitter Turn-On Voltage V
Static Forward

Current Transfer
Ratio

Transition Frequency f

Output Capacitance C
Switching Times T

*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device

CEO

GROUP B

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

CES

EBO

V

CE(sat)

BE(sat)

BE(on)

h

FE

T

obo

on

T

off

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

160 V

140 V IC=10mA*

10 V

0.01

µA

10

µA

10

µA

0.1

µA

0.75

1.1

0.85

1.2VV

1.7 1.9 V IC=1A, IB=10mA*

1.5 1.7 V IC=1A, VCE=5V*

1k
2k

100k

1k

10k

5k

20k

10k
5k

100k

10k

150 250 MHz IC=100mA, VCE=10V

10 15 MHz VCB=10V, f=1MHz

0.75

2.20

µ

s. Duty cycle ≤2%

µs
µs

FZT600

C

C

B

B

160 V
140 V

10 V

4A
2A
2W

-55 to +150 °C

=100µA

I

C

=100µA

I

E

V

=140V

CB

V

=140V, T

CB

V

CES

=8V

V

EB

IC=0.5A, IB=5mA*
I

=1A, IB=10mA*

C

IC=50mA, VCE=10V*

=0.5A, VCE=10V*

I

C

I

=1A, VCE=10V*

C

I

=50mA, VCE=10V*

C

=0.5mA, VCE=10V*

I

C

I

=1A, VCE=10V*

C

f=20MHz

I

=0.5A, VCE=10V

C

I

B1=IB2

amb

=140V

=0.5mA

E

E

C

C

=100°C

3 - 197

FZT600

TYPICAL CHARACTERISTICS

1.00

0.90

olts)

V
(

0.80

-

0.70

V

0.60

1.8

1.6

olts)
V

(

-

1.4

1.2

V

1.0

IC/IB=100

0

0.01

Collector Current (Amps)

IC-

0.01

IC-

0.1

CE(sat)

V

v IC

IC/IB=100

Collector Current (Amps)

BE(sat)

V

v IC

101

20k

16k

n

12k

Gai

-

h

8k

4k

0.001

1.5

1.4

olts)
V

(

-

1.3

V

1.2

1.1

100.1 1

Group B

Group A

0.01

Collector Current (Amps)

IC-

hFEv IC

0.01

IC- Collector Current (Amps)

BE(on)

V

0.1

110

v IC

VCE=10V

100.1 1

VCE=5V

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