Diodes FZT593 User Manual
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995 ✪
FZT593
COMPLEMENTARY TO FZT493
C
PARTMARKING DETAIL - FZT593
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Cut-Off Current I
Saturation Voltages V
Base-Emitter Turn-on Voltage V
Static Forward Current Transfer
Ratio
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
CES
CE(sat)
V
BE(sat)
BE(on)
h
FE
-120 V
-100 V IC=-10mA*
-5 V
-100 nA VCB=-100V
-100 nA VEB=-4V
-100 nA V
-0.2
-0.3VV
-1.1 V IC=-500mA,IB=-50mA*
-1.0 V IC=-1mA, VCE=-5V*
100
100
10050300
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
For typical Characteristics graphs see FMMT593 datasheet
T
obo
50 MHz IC=-50mA, VCE=-10V
5pFVCB=-10V, f=1MHz
µs. Duty cycle ≤ 2%
-120 V
-100 V
-5 V
-2 A
-1 A
-200 mA
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
=-100V
CES
IC=-250mA,IB=-25mA*
=-500mA IB=-50mA*
I
C
I
=-1mA, VCE=-5V
C
I
=-250mA,VCE=-5V*
C
=-500mA, VCE=-5V*
I
C
I
=-1A, VCE=-5V*
C
f=100MHz
E
C
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