Diodes FZT589 User Manual
SOT223 PNP SILICON PLANAR MEDIUM POWER
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 - OCTOBER 1995
FZT589
PARTMARKING DETAILS - FZT589
C
COMPLEMENTARY TYPES - FZT489
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C unless otherwise stated)
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector Emitter Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-50 V
-30 V
-5 V
-100
-100 nA V
-100 nA VEB=-4V
-0.35
-0.65
-1.2 V IC=-1A, IB=-100mA*
-1.1 V IC=-1A, VCE=-2V*
100
100
300
80
40
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FMMT549 datasheet
T
obo
100 MHz IC=-100mA, VCE=-5V
15 pF VCB=-10V, f=1MHz
µs. Duty cycle ≤2%
-50 V
-30 V
-5 V
-2 A
-1 A
-200 mA
2W
-55 to +150 °C
I
=-100µA
C
=-1mΑ∗
I
C
=-100µA
I
E
nA
VI
VCB=-30V
=-30V
CES
=-1A, IB=-100mA*
C
=-2A, IB=-200mA*
I
C
I
=-1mA, VCE=-2V*
C
=-500mA, VCE=-2V*
I
C
I
=-1A, VCE=-2V*
C
=-2A, VCE=-2V*
I
C
f=100MHz
E
C
3 - 194
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